相关论文: Resonant effects in a voltage-activated channel ga…
We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent…
Voltage-gated Kv channels play fundamental roles in many biological processes, such as the generation of the action potential. The gating mechanism of Kv channels is characterized experimentally by single-channel recordings and ensemble…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage,…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
We have carried out calculations of current-voltage characteristics for the electron tunnel current through a junction with a thin insulating ferroelectric barrier assuming that interface transmissions for the left and right interfaces…
We report on gate hysteresis in resistance on high quality graphene/h-BN devices. We observe a thermal activated hysteretic behavior in resistance as a function of the applied gate voltage at temperatures above 375K. In order to investigate…
We study the effect of resonances near the threshold of low energy ($\varepsilon$) reactive scattering processes, and find an anomalous behavior of the $s$-wave cross sections. For reaction and inelastic processes, the cross section…
We calculate characteristic correlation functions for the Anderson model with additional phonon-assisted coupling to the odd conduction channel. This model describes, for example, the behavior of a molecule embedded between two electrodes…
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron…
Many cell types exhibit oscillatory activity, such as repetitive action potential firing due to the Hodgkin-Huxley dynamics of ion channels in the cell membrane or reveal intracellular inositol triphosphate (IP$_3$) mediated calcium…
We use a computational model to propose a physiological mechanism by which transient control of beta oscillations in the indirect pathway of the basal ganglia is orchestrated at the cellular level. Our model includes a simple and robust…
Molecular motion through pores plays a crucial role in various natural and industrial processes. One of the most fascinating features of biological channel-facilitated transport is a stochastic gating process, when the channels dynamically…
A spin-dependent quantum transport is investigated in a paramagnetic resonant tunneling diode (RTD) based on a Zn$_{1-x}$Mn$_x$Se/ZnBeSe heterostructure. Using the Wigner-Poisson method and assuming the two-current model we have calculated…
We investigate calcium signaling feedback through calcium-activated potassium channels of a dendritic spine by applying the immersed boundary method with electrodiffusion. We simulate the stochastic gating of such ion channels and the…
We obtain the effective action of tunnel-coupled quantum dots, by modeling the system as a Luttinger liquid with multiple barriers. For a double dot system, we find that the resonance conditions for perfect conductance form a hexagon in the…
Hybrid ionic-electronic conductors have the potential to generate memory effects and neuronal behavior. The functionality of these mixed materials depends on ion motion through thin polarizable channels. Here, we explore different…
We show that individual vibrational modes in single-molecule junctions with asymmetric molecule-lead coupling can be selectively excited by applying an external bias voltage. Thereby, a non-statistical distribution of vibrational energy can…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices.…
We predict a spatially varying mode population to appear in a GaAs/AlGaAs-2DEG ballistic quantum channel pumped by a THz-field. If a resonant coupling between two modes is suddenly switched on at the entrance, Rabi oscillations in the mode…