相关论文: Resonant effects in a voltage-activated channel ga…

We present a discrete model of resonant scattering of waves by an open periodic waveguide. The model elucidates a phenomenon common in electromagnetics, in which the interaction of plane waves with embedded guided modes of the waveguide…

Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of…

The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the Numerical Renormalization Group method. At low temperatures and weak electron-phonon coupling the properties of…

An intense controversy has surrounded the mechanism of voltage-gating in ion channels. We interpreted the two leading models of voltage-gating with respect to the thermodynamic energetics of membrane insertion of the voltage-sensing…

We study a two terminal electronic conductance through an AB$_2$ ring which is an example of the family of itinerant geometrically frustrated electronic systems. These systems are characterized by the existence of localized states with…

A common method of controlling the chemical potential in topological insulators is applying a gate electrode. Simultaneously applying high source-drain bias currents can lead to parasitic effects in such devices. We derive that these…

We present detailed simulations addressing recent electronic interference experiments, where a metallic gate is used to locally modify the Fermi wave-length of the charge carriers. Our numerical calculations are based on a solution of the…

The effect of fluctuations on the conductivity of ion channels is investigated. It is shown that modulation of the potential barrier at the selectivity site due to electrostatic amplification of charge fluctuations at the channel mouth…

We investigate a one-dimensional electron liquid with two point scatterers of different strength. In the presence of electron interactions, the nonlinear conductance is shown to depend on the current direction. The resulting asymmetry of…

We consider the feasibility of observing a trap-induced resonance [Stock et al., Phys. Rev. Lett. 91, 183201 (2003)] for the case of two 133Cs atoms, trapped in separated wells of a polarization-gradient optical lattice, and interacting…

For the first time in a bulk proper uniaxial ferroelectrics, double antiferroelectric-like hysteresis loops have been observed in the case of Sn$_2$P$_2$S$_6$ crystal. The quantum anharmonic oscillator model was proposed for description of…

We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…

We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…

We carry out experiments on single-molecule junctions at low temperatures, using the mechanically controlled break junction technique. Analyzing the results received with more than ten different molecules the nature of the first peak in the…

Self-consistent electronic structure calculations, for devices recently fabricated and studied by Zhitenev et al. for capacitance spectroscopy in the quantum Hall regime, demonstrate that reproducible resonances in the coupling between…

The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…

The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…

In this work, we present the effects of stochastic force generated by white noise on the nonlinear dynamics of a circular silicon nitride membrane. By tuning the membrane to the Duffing nonlinear region, detected signals switching between…

We theoretically investigate the non-equilibrium current through a quantum dot coupled to one- dimensional electron leads, utilizing a controlled frequency-dependent renormalization group (RG) approach. We compute the non-equilibrium…