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相关论文: Fractal-Mound Growth of Pentacene Thin Films

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Pentacene is known to grow on isotropic silicon oxide surfaces in a substrate-induced phase with fiber textured crystallites. This growth study reports on the growth of pentacene crystallites on uniaxially oriented surfaces. Silica…

The formation of three-dimensional structures during the epitaxial growth of films is associated to the reflection of diffusing particles in descending terraces due to the presence of the so-called Ehrlich-Schwoebel (ES) barrier. We…

统计力学 · 物理学 2011-09-23 F. F. Leal , T. J. Oliveira , S. C. Ferreira

The random deposition model must be enriched to reflect the variety of surface roughness due to some material characteristics of the film growing by vacuum deposition or sputtering. The essence of the computer simulation in this case is to…

凝聚态物理 · 物理学 2007-05-23 K. Malarz , A. Z. Maksymowicz

In an attempt to find generic features on the fractal growth of Au films deposited on Ru(001), a simple simulation model based on irreversible diffusion-limited aggregation (DLA) is discussed. Highly irregular two-dimensional dentritic…

凝聚态物理 · 物理学 2009-10-22 E. Canessa , A. Calmetta

Two-dimensional structures grown with Witten and Sander algorithm are investigated. We analyze clusters grown off-lattice and clusters grown with antenna method with $N_{fp}=3,4,5,6,7$ and 8 allowed growth directions. With the help of…

统计力学 · 物理学 2015-05-19 Anton Yu. Menshutin , Lev. N. Shchur

Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene.…

材料科学 · 物理学 2015-05-13 B. R. Conrad , W. G. Cullen , B. C. Riddick , E. D. Williams

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is…

In this paper, we present results of extensive Monte Carlo simulations of diffusion-limited aggregation (DLA) with a seed placed on an attractive plane as a simple model in connection with the electrical double layers. We compute the…

统计力学 · 物理学 2012-07-31 S. H. Ebrahimnazhad Rahbari , A. A. Saberi

We report the results of computer simulations of epitaxial growth in the presence of a large Schwoebel barrier on different crystal surfaces: simple cubic(001), bcc(001), simple hexagonal(001) and hcp(001). We find, that mounds coarse by a…

统计力学 · 物理学 2009-10-31 M. Ahr , M. Biehl , M. Kinne , W. Kinzel

We investigated structure and morphology of PTFE layers deposited by vacuum process in dependence on deposition parameters: deposition rate, deposition temperature, electron activation energy and activation current. Pentacene (PnC) layers…

材料科学 · 物理学 2007-05-23 M. Prelipceanu , O. S. Prelipceanu , O. G. Tudose , K. Grytsenko , S. Schrader

We study the fractal structure of Diffusion-Limited Aggregation (DLA) clusters on the square lattice by extensive numerical simulations (with clusters having up to $10^8$ particles). We observe that DLA clusters undergo strongly anisotropic…

统计力学 · 物理学 2017-11-08 Denis S. Grebenkov , Dmitry Beliaev

The formation of mounded surfaces in epitaxial growth is attributed to the presence of barriers against interlayer diffusion in the terrace edges, known as Ehrlich-Schwoebel (ES) barriers. We investigate a model for epitaxial growth using a…

统计力学 · 物理学 2015-03-13 F. F. Leal , S. C. Ferreira , S. O. Ferreira

The energetically driven Ehrlich-Schwoebel (ES) barrier had been generally accepted as the primary cause of the growth instability in the form of quasi-regular mound-like structures observed on the surface of thin film grown via molecular…

材料科学 · 物理学 2015-05-18 Wittawat Kanjanaput , Surachate Limkumnerd , Patcha Chatraphorn

In this paper we briefly review a model that describes the diffusion-controlled aggregation exhibited by particles as they are deposited on a surface. This model allows to understand many experiments of thin film deposition. In the first…

We demonstrate, using well-established nonequilibrium limited-mobility solid-on-solid growth models, that mound formation in the dynamical surface growth morphology does not necessarily imply the existence of a surface edge diffusion bias…

统计力学 · 物理学 2009-10-31 S. Das Sarma , P. Punyindu , Z. Toroczkai

Diffusion Limited Aggregation (DLA) is a model of fractal growth that was introduced in 1981 and had since attained a paradigmatic status due to its simplicity and its underlying role for a variety of pattern forming processes. Despite…

统计力学 · 物理学 2007-05-23 Benny Davidovich , Itamar Procaccia

Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the…

超导电性 · 物理学 2009-09-14 T. Kawaguchi , H. Uemura , T. Ohno , R. Watanabe , M. Tabuchi , T. Ujihara , K. Takenaka , Y. Takeda , H. Ikuta

We develop a general theory of transport-limited aggregation phenomena occurring on curved surfaces, based on stochastic iterated conformal maps and conformal projections to the complex plane. To illustrate the theory, we use stereographic…

统计力学 · 物理学 2015-05-18 Jaehyuk Choi , Darren Crowdy , Martin Z. Bazant

Diffusion Limited Aggregation (DLA) has served for forty years as a paradigmatic example for the creation of fractal growth patterns. In spite of thousands of references no exact result for the fractal dimension $D$ of DLA is known. In this…

统计力学 · 物理学 2021-02-17 Eviatar B. Procaccia , Itamar Procaccia

We study step flow growth of epitaxial graphene on 6H-SiC using a one dimensional kinetic Monte Carlo model. The model parameters are effective energy barriers for the nucleation and propagation of graphene at the SiC steps. When the model…

介观与纳米尺度物理 · 物理学 2015-05-30 Fan Ming , Andrew Zangwill
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