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相关论文: Contact effects in polymer field-effect transistor…

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Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole…

材料科学 · 物理学 2013-12-04 Akshaya K. Palai , N. Periasamy , Meghan P. Patankar , K. L. Narasimhan

We report a new strategy for fabricating 2D/2D low-resistance ohmic contacts for a variety of transition metal dichalcogenides (TMDs) using van der Waals assembly of substitutionally doped TMDs as drain/source contacts and TMDs with no…

In all printed OFETs with Poly(3,4-ethylenedioxythiophene)/ poly(styrenesulfonate) (PEDOT/ PSS) gate, offset printing and gravure of electrically dense sub-$\mu$ insulators from polyvinylphenol (PVPh), polyvinyl alcohol (PVOH) and…

材料科学 · 物理学 2007-05-23 Z. Shalabutov , M. Friedrich , I. Thurzo , A. Hübler , D. R. T. Zahn , U. Hahn

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties…

材料科学 · 物理学 2013-04-26 Kosuke Nagashio , Akira Toriumi

The application of two-dimensional (2D) semiconductors, such as monolayer MoS2, is limited by the high contact resistance commonly attributed to interfacial barriers at metal contacts. Furthermore, the dependence of electrical conductivity…

High contact resistance remains a central obstacle to the integration of two-dimensional (2D) semiconductors in electronic devices. Recent advances have demonstrated that contact performance can be dramatically improved through interface…

A prototypical organic photovoltaic material is a heterojunction composed of the blend of regioregular poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C$_{61}$-butyric acid methyl ester (PCBM). Microscopic understanding of the energy…

材料科学 · 物理学 2020-06-29 Olugbenga Adeniran , Sivan Refaely-Abramson , Zhen-Fei Liu

We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages <1-2 V, enabled by the almost trap-free interface between the organic semiconductor…

材料科学 · 物理学 2010-01-01 M. P. Walser , W. L. Kalb , T. Mathis , B. Batlogg

Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs…

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

介观与纳米尺度物理 · 物理学 2016-11-24 F. Giubileo , A. Di Bartolomeo , N. Martucciello , F. Romeo , L. Iemmo , P. Romano , M. Passacantando

For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The…

材料科学 · 物理学 2014-05-13 Yuchen Du , Lingming Yang , Jingyun Zhang , Han Liu , Kausik Majumdar , Paul D. Kirsch , Peide D. Ye

The p-type surface conductivity of H-terminated diamond (HD, H-diamond) has created new path ways for developing diamond based electronic devices as well as chemical and bio-sensors. However, the hydrophobic nature of the HD surface can…

材料科学 · 物理学 2026-04-03 N. Mohasin Sulthana , P. K. Ajikumar , K. Ganesan

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…

强关联电子 · 物理学 2009-11-13 S. Fratini , A. F. Morpurgo , S. Ciuchi

Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low…

材料科学 · 物理学 2018-06-11 Yuping He , François Léonard , Catalin D. Spataru

The contact issue for two-dimensional (2D) materials-based field-effect transistors (FETs) has drawn enormous attention in recent years. Although ohmic behavior is achieved at room temperature, the drain current of 2DFETs shifts from ohmic…

介观与纳米尺度物理 · 物理学 2025-11-04 Kwok-Ho Wong , Mansun Chan

Polymeric methyltrioxorhenium, {(CH_{3})_{0.92}ReO_{3}}_{\infty} (poly-MTO), is the first member of a new class of organometallic hybrids which adopts the structural pattern and physical properties of classical perovskites in two dimensions…

V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in…

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low…

Irreproducibility is a serious issue in thin film organic photovoltaic (OPV) devices, as smallest local inhomogeneities can change the entire behaviour of identically built devices without showing obvious failure. Inhomogeneities can occur…

We investigate a Fabry-P\'erot interferometer in the integer Hall regime in which only one edge channel is transmitted and n channels are trapped into the interferometer loop. Addressing recent experimental observations, we assume that…

介观与纳米尺度物理 · 物理学 2017-08-18 D. Ferraro , E. Sukhorukov