相关论文: Electric-field-dependent spectroscopy of charge mo…
Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…
A quantum-limited electrometer based on charge modulation of the Josephson supercurrent in the Bloch transistor inserted into a superconducting ring is proposed. As this ring is inductive coupled to a high-Q resonance tank circuit, the…
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by…
We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters…
The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3 /SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence,…
We have used a superconducting single-electron transistor as a DC-electrometer that is strongly coupled to the metal island of another transistor. With this set-up, it is possible to directly measure the charge distribution on this island.…
Motivated by recent experiments and band calculation results, we investigate the possibility of superconductivity originating from the $a_{1g}$ band of Na$_x$CoO$_2\cdot y$H$_2$O assuming the absence of $e_g'$ pockets. We adopt a single…
Based on the scattering matrix theory and non-equilibrium green function method, we have investigated the fluctuations of charge and spin current of the systems which consists of a quantum dot (QD) with a resonant level coupled to two…
Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable. The model explains the recent observation of asymmetric…
Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using ebeam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron…
We measure the full distribution of current fluctuations in a single-electron transistor with a controllable bistability. The conductance switches randomly between two levels due to the tunneling of single electrons in a separate…
Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature,…
Fluctuations of conserved quantities within a subsystem are non-local observables that provide unique insights into quantum many-body systems. In this paper, we study bipartite charge (and spin) fluctuations across interaction-driven…
We investigate tunable superconducting transitions in (111)$\mathrm{LaAlO}_3/\mathrm{KTaO}_3$ field-effect devices. Large increases in conductivity, associated with superconducting fluctuations, are observed far above the transition…
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…
The $f^{-\gamma}$ sloped current noise power spectra, observed in organic semiconductors, have been interpreted within a {\em variable range hopping} mechanism of the fluctuations. The relative current noise power spectral density ${\cal…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
In this paper we report measurements of conductance fluctuations in single crystal samples of Si doped with P and B close to the critical composition of the metal insulator transition (n_c \approx 4 x 10^18 /cc). The measurements show that…
The non-Ohmic effect of a high electric field on the out-of-plane magneto-conductivity of a layered superconductor near the superconducting transition is studied in the frame of the Langevin approach to the time-dependent Ginzburg-Landau…