相关论文: Electric-field-dependent spectroscopy of charge mo…

The local atomic structure of superconducting NdO$_{1-x}$F$_{x}$BiS$_{2}$ ($x$=0.2 and 0.4) is investigated using neutron diffraction and the pair density function analysis technique. In the non-superconducting $x$=0.2 composition,…

We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron…

Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By…

We report on the effect of the frequency-locked transfer of single Cooper pairs in a superconducting single-electron Al transistor embedded in a dissipative environment (on-chip Cr resistor of R = 40 kOhm). The transistor was dc voltage…

We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…

We study the single-particle spectral properties of electrons coupled to quasicritical charge and spin fluctuations close to a stripe-phase, which is governed by a Quantum Critical Point near optimum doping. We find that spectral weight is…

Evidence for local charge fluctuations linked to a charge disproportionation of the Bi ions in the distorted lattice of superconducting LaO$_{1-x}$F$_{x}$ BiS$_{2}$ is presented. In-plane short-range distortions of sulfur atoms up to 0.3…

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional…

Despite the concerted effort of several research groups, a detailed experimental account of defect dynamics in high-quality single- and few-layer transition metal dichalcogenides remain elusive. In this paper we report an experimental study…

Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…

We study magneto-electric properties of single electron traps in metal-oxide-semiconductor field effect transistors. Using a microscopic description of the system based on the single-site Anderson-Holstein model, we derive an effective low…

A theoretical interpretation of the recent experiments of Astafiev et. al. on the T_1-relaxation rate in Josephson Charge Qubits is proposed. The experimentally observed reproducible nonmonotonic dependence of T_1 on the splitting E_J of…

Josephson junctions made from aluminium and its oxide are the most commonly used functional elements for superconducting circuits and qubits. It is generally known that the disordered thin-film AlOx contains atomic tunneling systems.…

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions…

Coupled systems in mesoscopic regime are of interest as charge fluctuation between the sub-systems will depend on electron-electron interactions and will play a dominant role in determining their thermodynamic properties. We study some…

We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively…

A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…