相关论文: Planar Hall Effect MRAM

Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of…

We present the results of numerical simulation of magnetodielectric effect (MDE) in magnetorheological elastomers (MRE) - the change of effective permittivity of elastomer placed under the external magnetic field. The computer model of…

We present an approach to the fractional quantum Hall effect observed in grapheme (GFQHE), basing us on the model developed previously for the fractional quantum Hall effect in a two-dimensional electron system embedded in a quantum well…

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…

Since the first experimental observation of the phonon Hall effect (PHE) in 2005, its physical origin and theoretical explanation have been extensively investigated. While spin-orbit interactions are believed to play important roles under…

One of the key elements in spintronics research is the spin Hall effect, allowing to generate spin currents from charge currents. A large spin Hall effect is observed in materials with strong spin orbit coupling, e.g., Pt. Recent research…

We show that a moderately strong constant electric field in the plane of a monolayer graphene sheet can create particle-hole pairs at an observable rate. The pairs undergo zitterbewegung in opposite directions leading to a Hall-like…

We theoretically report that, with \textit{in-plane} magnetization, the quantum anomalous Hall effect (QAHE) can be realized in two-dimensional atomic crystal layers with preserved inversion symmetry but broken out-of-plane mirror…

Exploring new Hall effect is always a fascinating research topic. The ordinary Hall effect and the quantum Hall effect, initially discovered in two-dimensional (2D) non-magnetic systems, are the phenomena that a transverse current is…

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

Thin Co/Pd multilayers, with room temperature perpendicular anisotropy and an enhanced surface scattering, were studied for the possible use in the extraordinary Hall effect (EHE) - based magnetic memory devices. Polarity of the EHE signal…

In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect…

The condensed-matter version of the chiral anomaly describes how electrons are pumped from a Weyl node with negative chirality to a Weyl node with positive chirality using parallel electric and magnetic fields. Key experimental signatures…

Within the linear response of polycrystalline magnetic films to electric currents, a general analysis predicts three new galvanomagnetic effects originated from the two-dimensional nature of the films. These new galvanomagnetic effects,…

Recently, the planar Hall effect has attracted tremendous interest. In particular, an in-plane magnetization can induce an anomalous planar Hall effect with a $2\pi/3$ period for hexagon-warped energy bands. This effect is similar to the…

Transport signatures of exchange gap opening because of magnetic proximity effect (MPE) are reported for bilayer structures of Bi2Se3 thin films on yttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicular magnetic…

We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…

Temperature-dependence and magnetic field-dependence of the Hall effect and the magnetic property in manganese-oxide thin films are studied. The spontaneous magnetization and the Hall resistivity are obtained for a various of magnetic…

The planar Hall effect is a phenomenon that the Hall conductivity emerges perpendicular to the electric field in the presence of an in-plane magnetic field. We investigate the planar Hall effect in two-dimensional metal coupled with higher…