相关论文: Planar Hall Effect MRAM

Granular metals offer tailorable electronic properties and play crucial roles in device and sensor applications. We have fabricated a series of nonmagnetic granular CoSi2 thin films and studied the Hall effect and transport properties. We…

The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…

In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance…

We present an analysis of the orbital Hall effect (OHE) in a strip geometry and derive a formula for the orbital angular momentum (OAM) accumulation at the edges. The result is expressed in terms of band structure parameters and scattering…

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory…

Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…

The effect of resonant tunneling on magnetoresistance (MR) is studied theoretically in a double junction system. We have found that the ratio of the MR of the resonant peak current is reduced more than that of the single junction, whereas…

It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…

The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear…

When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is…

We propose a superconducting ratchet-induced Hall effect (RHE), characterized by the emergence of a unidirectional, rectified flux of fluctuating Cooper pairs in a two-dimensional thin film exposed to an external electromagnetic field. The…

The planar Hall effect (PHE), wherein a rotating magnetic field in the plane of a sample induces oscillating transverse voltage, has recently garnered attention in a wide range of topological metals and insulators. The observed twofold…

The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…

The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…

The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films…

Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…

Perpendicular magnetic anisotropy (PMA) is a key property of magnetoresistive random access memory (MRAM). To increase areal density of MRAM it is important to find a way to enhance the PMA. Recently a strong enhancement of the PMA by…

The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital…

Armed with the extended semiclassical theory, we propose a Hall effect at $EB$ order, particularly in Weyl semimetals (WSMs). We dub this effect the in-plane magnetononlinear Hall effect (IMHE) since the Hall current and the driving…

The fate of integer quantum Hall effect (IQHE) at weak magnetic field is studied numerically in the presence of {\it correlated} disorders. We find a systematic {\it float-up} and {\it merging} picture for extended levels on the low-energy…