中文
相关论文

相关论文: Planar Hall Effect MRAM

200 篇论文

Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration…

介观与纳米尺度物理 · 物理学 2023-04-27 Jin Cao , Wei Jiang , Xiao-Ping Li , Daifeng Tu , Jiadong Zhou , Jianhui Zhou , Yugui Yao

Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak…

介观与纳米尺度物理 · 物理学 2022-10-19 Yang Wang , Sivakumar V. Mambakkam , Yue-Xin Huang , Yong Wang , Yi Ji , Cong Xiao , Shengyuan A. Yang , Stephanie A. Law , John Q. Xiao

The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y3Fe5O12) was measured in the magnetic field rotating in the film plane. The magnetic field angle dependence of planar Hall resistance (PHR) has been observed in YIG/IrMn…

材料科学 · 物理学 2015-06-23 Xu Zhang

Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory…

Planar Topological Hall effect (PTHE) is known to arise from in-plane skyrmion tubes with an external magnetic field applied in the plane of the charge current. Here, we propose that the PTHE can robustly appear also from an unexpected…

强关联电子 · 物理学 2020-09-02 Narayan Mohanta , Satoshi Okamoto , Elbio Dagotto

Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic…

Recent observation of anomalous Hall effect (AHE) induced by magnetic field or spin magnetization lying in the Hall deflection plane has sparked interest in diverse mechanisms for inducing the Hall vector component perpendicular to the…

The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…

材料科学 · 物理学 2025-12-19 Longju Yu , Hong Jian Zhao , Yurong Yang , Laurent Bellaiche , Yanming Ma

Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly…

强关联电子 · 物理学 2008-03-04 A. Gerber , O. Riss

Spin Hall effect is the transverse flow of the electron spin in conductors under external electric field. Similarly, thermal gradient in magnetic insulators can drive a transverse flow of the spin angular momentum of magnons, which provides…

介观与纳米尺度物理 · 物理学 2020-12-02 Sungjoon Park , Bohm-Jung Yang

Searching for exotic transport properties in new topological state of matters is an active topic. One of the most fascinating achievements is the chiral anomaly in recently discovered Weyl semimetals (WSMs), which is manifested as a…

介观与纳米尺度物理 · 物理学 2018-10-17 Min Wu , Guolin Zheng , Weiwei Chu , Wenshuai Gao , Hongwei Zhang , Jianwei Lu , Yuyan Han , Jiyong Yang , Haifeng Du , Wei Ning , Yuheng Zhang , Mingliang Tian

We propose a quantum geometric map for the magnetononlinear Hall effect (MNHE), the planar Hall effect (PHE), and the ordinary Hall effect (OHE). These magnetotransport phenomena originate from the bilinear charge current of Bloch electrons…

介观与纳米尺度物理 · 物理学 2026-04-17 Longjun Xiang , Jinxiong Jia , Fuming Xu , Jian Wang

We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…

The Planar Hall effect (PHE) in topological materials has been a subject of great interest in recent years. Generally, it is understood to originate from the chiral-anomaly (CA) induced charge pumping between doubly degenerate Weyl nodes.…

强关联电子 · 物理学 2024-01-12 Sonika , Sunil Gagwar , Nikhlesh Singh Mehta , G. Sharma , C. S. Yadav

Since Edwin Halls groundbreaking discovery of the Hall effect in 1879, magnetism, spin, and quantization have been expanding the scope of Hall effects, continuously driving transformative progress in science and technology. Among them, the…

Magneto-nonlinear Hall effect is known to be intrinsic and requires time-reversal symmetry. Here we show that a new type of magneto-nonlinear Hall effect can occur in the time-reversal breaking materials within the second-order response to…

介观与纳米尺度物理 · 物理学 2025-01-31 Anwei Zhang , Jun-Won Rhim

Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs…

介观与纳米尺度物理 · 物理学 2017-02-08 Subir Parui , Mário Ribeiro , Ainhoa Atxabal , Amilcar Bedoya-Pinto , Xiangnan Sun , Roger Llopis , Fèlix Casanova , Luis E. Hueso

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…

材料科学 · 物理学 2013-05-30 Luqiao Liu , O. J. Lee , T. J. Gudmundsen , D. C. Ralph , R. A. Buhrman

The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…

We study the magnetic and transport properties of epitaxial graphene films in this letter. We predict enhanced signal of magnetic susceptibility and relate it to the intrinsic valley magnetic moments. There is also an anomalous contribution…

介观与纳米尺度物理 · 物理学 2011-03-31 Tianyi Cai , Wang Yao , Shengyuan A. Yang , Junren Shi , Qian Niu