相关论文: Planar Hall Effect MRAM

We theoretically investigated the magnetoresistance (MR) and planar Hall effect (PHE) in Weyl semimetals based on the semiclassical Boltzmann theory, focusing on the fine structure of the band dispersion. We identified that the negative…

A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall…

The planar Hall effect (PHE), the appearance of an in-plane transverse voltage in the presence of co-planar electric ($\mathbf{E}$) and magnetic ($\mathbf{B}$) fields, occurs in regular Weyl semimetals (WSMs) as one of the fundamental…

Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between…

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE…

Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled…

We have studied the anomalous Hall effect (AHE) in strained thin films of the frustrated antiferromagnet Mn$_{3}$NiN. The AHE does not follow the conventional relationships with magnetization or longitudinal conductivity and is enhanced…

The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is…

In this work, we report on the emergence of a photonic Hall effect (PHE) system within a narrow filtered background of a one-dimensional defective optical dielectric structure with graphene under the static QHE regime. It is observed that…

As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes…

Metallic amorphous ferrimagnets derived from alloying 3d transition metals with 4f electron rare earths host fascinating effects of compensation between the 3d and 4f magnetic sublattices. Here, a detailed study of anisotropic…

The planar Hall effect in 3D systems is an effective probe for their Berry curvature, topology, and electronic properties. However, the Berry curvature-induced conventional planar Hall effect is forbidden in 2D systems as the out-of-plane…

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic…

We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization…

The planar Hall effect (PHE), the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields, has been ascribed to the chiral anomaly and Berry curvature effects in Weyl semimetals. In the presence…

Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called…

In condensed matter physics, the term "chiral anomaly" implies the violation of the separate number conservation laws of Weyl fermions of different chiralities in the presence of parallel electric and magnetic fields. One effect of chiral…

Valley-spin hall (VSH) effect in monolayer WSe2 has been shown to exhibit highly beneficial features for nonvolatile memory (NVM) design. Key advantages of VSH-based magnetic random-access memory (VSH-MRAM) over spin orbit torque (SOT)-MRAM…

The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale…

Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…