Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly selected spin-orbit scattering events. Already achieved sensitivity of the EHE-based sample devices exceeds 1000 Ohm/T, which surpasses the sensitivity of semiconducting Hall sensors. Linear field response, thermal stability, high frequency operation, sub-micron dimensions and, above all, simplicity, robustness and low cost manufacture are good reasons to consider a wide scale technological application of the phenomenon for magnetic sensors and memory devices.
@article{arxiv.0803.0124,
title = {Perspective of spintronics applications based on the Extraordinary Hall Effect},
author = {A. Gerber and O. Riss},
journal= {arXiv preprint arXiv:0803.0124},
year = {2008}
}
Comments
Invited paper to be published in Journal of Nanoelectronics and Optoelectronics (JNO)