相关论文: A room-temperature polymeric spin-valve

Tunneling magnetoresistance (TMR) via oxides or molecules includes fruitful physics, such as spin filtering and hybridized interface states, in addition to various practical applications using large TMR ratio at room temperature. Then, a…

A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…

The magnetoresistance (MR) in polycrystalline colossal magnetoresistive compounds follows a behavior different from single crystals below the ferromagnetic transition temperature. This difference is usually attributed to spin polarized…

We report on the design and implementation of a rotating sample magnetometer (RSM) operating in the variable temperature insert of a cryostat equipped with a high-field magnet. The limited space and the cryogenic temperatures impose the…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…

The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tc at 78 K and a delicate yet consequential magnetic frustration, exhibits colossal magnetoresistance (CMR) when the magnetic field is applied along the magnetic hard…

Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode,…

We consider a microscopic theory for the spin Hall magnetoresistance (SMR). We generally formulate a spin conductance at an interface between a normal metal and a magnetic insulator in terms of spin susceptibilities. We reveal that SMR is…

Spin-related electronics using two dimensional (2D) van der Waals (vdW) materials as a platform are believed to hold great promise for revolutionizing the next generation spintronics. Although many emerging new phenomena have been…

We have investigated the magnetoresistance of ferromagnet-semiconductor devices in an InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The magnetoresistance of our device is large. The…

The results of heat-capacity, magnetic susceptibility, electrical resistivity and magnetoresistance $(\Delta \rho/\rho)$ measurements on the compounds Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$, are reported. The results establish that these…

The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…

The resistivities of the dilute, strongly-interacting 2D electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by…

The resistivity in magnetic materials has been theoretically shown to depend on the spin-spin correlation function which in turn depends on the magnetic-field, the density of conduction electron, the magnetic ordering stability, etc.…

We study a triplet spin valve obtained by intercalating a triplet superconductor spacer between two ferromagnetic regions with non-collinear magnetizations. We demonstrate that the magnetoresitance of the triplet spin valve depends on the…

We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000%…

Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission…