相关论文: Growth kinetics effects on self-assembled InAs/InP…
We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within…
Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we…
The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally,…
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell…
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
Motivated by a series of experiments that revealed a temperature dependence of the dynamic scaling regime of growing surfaces, we investigate theoretically how a nonequilibrium growth process reacts to a sudden change of system parameters.…
We study the dynamics of a quantum dot embedded in a three-dimensional microcavity in the strong coupling regime in which the quantum dot exciton has an energy close to the frequency of a confined cavity mode. Under the continuous pumping…
A method based on the kinetics of adatoms on a growing surface under epitaxial growth at low temperature in (1+1) dimensions is proposed to obtain a closed form of local growth equation. It can be generalized to any growth problem as long…
Within random matrix theory for quantum dots, both the dot's one-particle eigenlevels and the dot-lead couplings are statistically distributed. While the effect of the latter on the conductance is obvious and has been taken into account in…
The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a…
We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically…
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…
Growth evolution of InN nanostructures via a chemical vapor deposition technique is reported using In_2O_3 as precursor material and NH_3 as reactive gas in the temperature range of 550-700 ^oC. Morphology of the nanostructures solely…
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission…
In this work the intersubband electronic properties of two laterally coupled dome-shaped InAs/GaAs quantum dots were investigated. The envelope functions and eigenenergies were calculated as function of distance between the dots. The…
Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $\delta$ like density distribution along the crystal…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
In this work we investigate the electronic and optical properties of self-assembled InN/GaN quantum dots. The one-particle states of the low-dimensional heterostructures are provided by a tight-binding model that fully includes the wurtzite…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
Modulational instability of a uniform two-dimensional binary Bose-Einstein condensate (BEC) in the presence of quantum fluctuations is studied. The analysis is based on the coupled Gross-Pitaevskii equations. It is shown that quantum…