相关论文: Growth kinetics effects on self-assembled InAs/InP…
Mounding instability in a conserved growth from vapor is analysed within the framework of adatom kinetics on the growing surface. The analysis shows that depending on the local structure on the surface, kinetics of adatoms may vary, leading…
InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We investigated strained composite quantum wells of…
The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled.…
In many growth processes particles are highly mobile in an active layer at the surface, but are relatively immobile once incorporated in the bulk. We study models in which atoms are allowed to interact, equilibrate, and order on the…
Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical…
The kinetics of order-disorder transition of FePt nanoparticles during high temperature annealing is theoretically investigated. A model is developed to address the influence of large surface to volume ratio of nanoparticles on both the…
We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, and obtained the geometries of the dots from scanning transmission electron microscopy data. Post-thermal annealing is essential for the optical activation of quantum dots…
The formation of quantized vortices is a unifying feature of quantum mechanical systems, making it a premier means for fundamental and comparative studies of different quantum fluids. Being excited states of motion, vortices are normally…
We analyse the impact of growth conditions on asymmetric magnetic bubble expansion under in-plane field in ultrathin Pt / Co / Pt films. Specifically, using sputter deposition we vary the Ar pressure during the growth of the top Pt layer.…
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning…
We investigate the quantum evolution speed of a qubit in two kinds of finite-temperature environments. The first environment is a bosonic bath with Ohmic-like spectrum. It is found that the high temperature not only leads to the speed-up…
We report numerical investigations of a three-dimensional model of diffusive growth of fine particles, the internal structure of which corresponds to different crystal lattices. A growing cluster (particle) is immersed in, and exchanges…
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780…
Semiconductor nano-crystals, known as quantum dots (QDs), have attracted significant attention for their unique fluorescence properties. Under continuous excitation, QDs emit photons with intricate intensity fluctuation: the intensity of…
Interband absorption and luminescence of quasi-two-dimensional, circularly symmetric, N_e electron quantum dots are studied at high magnetic fields, 8<B<60 T, and low temperatures, T<<2 K. In the N_e=0 and 1 dots, the initial and final…
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light…
We present an optical study of closely-spaced self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the…
While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty…
Inhomogeneities in deposition may lead to formation of rough surfaces, whose height fluctuations can be probed directly by scanning microscopy, or indirectly by scattering. Analytical or numerical treatments of simple growth models suggest…
Herein we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable,…