Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.
@article{arxiv.0809.2771,
title = {Tuning the exciton g-factor in single InAs/InP quantum dots},
author = {D. Kim and W. Sheng and P. J. Poole and D. Dalacu and J. Lefebvre and J. Lapointe and M. E. Reimer and G. C. Aers and R. L. Williams},
journal= {arXiv preprint arXiv:0809.2771},
year = {2009}
}