相关论文: Solid phase epitaxy of ferromagnetic MnAs dots on …

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge…

We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers…

The structural analysis of GaN and Al$_x$Ga$_{1-x}$N/GaN heterostructures grown by metalorganic vapor phase epitaxy in the presence of Mn reveals how Mn affects the growth process, and in particular the incorporation of Al, the morphology…

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that…

An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of…

We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system…

Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers…

This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which…

A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial…

This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW…

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires.…

Scanning tunneling microscopy (STM) and spectroscopy (STS) in combination with density functional theory (DFT) calculations are employed to study the surface and subsurface properties of the metastable phase of the phase change material…

(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true…

We show that CdMnTe self-assembled quantum dots can be formed by depositing a submonolayer of Mn ions over a ZnTe surface prior to deposition of the CdTe dot layer. Single dot emission lines and strongly polarized quantum dot…

Single-phase Ni0.46Mn0.54As films with strained C1b symmetry have been successfully grown on GaAs (001) substrates by molecular-beam epitaxy. The epitaxial relationship between the film and the substrate has been studied using synchrotron…

We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux.…

We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly…

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low temperature annealing. Careful control of the annealing conditions allows us…

We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the…

In the present study we have demonstrated epitaxial stabilization of the metastable magnetically-hard $\varepsilon$-Fe$_2$O$_3$ phase on top of a thin MgO(111) buffer layer grown onto the GaN (0001) surface. The primary purpose to introduce…