Mn掺杂GaAs纳米线中Mn的位点：EXAFS研究
材料科学
2012-06-14 v1
摘要
我们展示了Mn掺杂GaAs纳米线中Mn原子环境的EXAFS研究。Mn掺杂是通过用于纳米线生长的Mn种子的扩散或在Au诱导线生长过程中提供Mn来实现的。总体发现，我们观察到Mn与As形成化学键，但并未占据替代位点。在Mn诱导的GaAs线中，Mn主要与As键合，处于相当无序的环境中，且键长拉长，类似于MnAs相所表现出的特征。在Au种子纳米线中，除了拉长的Mn-As配位外，我们还发现Mn存在于Mn-Au金属间化合物中。
引用
@article{arxiv.1206.2823,
title = {The Mn site in Mn-doped Ga-As nanowires: an EXAFS study},
author = {F. d'Acapito and M. Rovezzi and F. Boscherini and F. Jabeen and G. Bais and M. Piccin and S. Rubini and F. Martelli},
journal= {arXiv preprint arXiv:1206.2823},
year = {2012}
}
备注
This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at doi:10.1088/0268-1242/27/8/085001