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相关论文: Ambipolar Cu- and Fe-Phthalocyanine single-crystal…

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Ambipolar charge carrier transport in Copper phthalocyanine (CuPc) is studied experimentally in field-effect transistors and metal-insulator-semiconductor diodes at various temperatures. The electronic structure and the transport properties…

介观与纳米尺度物理 · 物理学 2015-03-13 C. Schuster , M. Kraus , A. Opitz , W. Brütting , U. Eckern

Mixed layers of copper-phthalocyanine (p-conductive) and fullerene (n-conductive) are used for the fabrication of organic field-effect transistors (OFETs) and inverters. Regarding the electrical characteristics of these donor-acceptor…

软凝聚态物质 · 物理学 2007-05-23 A. Opitz , M. Bronner , W. Bruetting

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The…

材料科学 · 物理学 2009-11-10 R. W. I. de Boer , T. M. Klapwijk , A. F. Morpurgo

Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge…

材料科学 · 物理学 2009-11-10 Roswitha Zeis , Theo Siegrist , Christian Kloc

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…

材料科学 · 物理学 2015-05-20 Yu Saito , Yoshihiro Iwasa

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

材料科学 · 物理学 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

Semiconducting two-dimensional transition metal chalcogenide crystals have been regarded as the promising candidate for the future generation of transistor in modern electronics. However, how to fabricate those crystals into practical…

介观与纳米尺度物理 · 物理学 2014-11-18 Xue Liu , Jin Hu , Chunlei Yue , Nicholas D. Della Fera , Yun Ling , Zhiqiang Mao , Jiang Wei

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…

其他凝聚态物理 · 物理学 2009-11-10 R. W. I. de Boer , M. E. Gershenson , A. F. Morpurgo , V. Podzorov

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

介观与纳米尺度物理 · 物理学 2015-08-04 Binhui Hu , M. M. Yazdanpanah , B. E. Kane , E. H. Hwang , S. Das Sarma

We report a systematic study of structural and transport properties in single crystals of Ba(Fe_(1-x)Ru_x)_2As_2 for x ranging from 0 to 0.5. The isovalent substitution of Fe by Ru leads to an increase of the a parameter and a decrease of…

超导电性 · 物理学 2010-06-07 F. Rullier-Albenque , D. Colson , A. Forget , P. Thuery , S. Poissonnet

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…

强关联电子 · 物理学 2009-11-10 V. Podzorov , S. E. Sysoev , E. Loginova , V. M. Pudalov , M. E. Gershenson

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that…

其他凝聚态物理 · 物理学 2009-11-10 C. Goldmann , S. Haas , C. Krellner , K. P. Pernstich , D. J. Gundlach , B. Batlogg

The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties…

材料科学 · 物理学 2018-06-06 P. Shahi , D. J. Singh , J. P. Sun , L. X. Zhao , G. F. Chen , J. -Q. Yan , D. G. Mandrus , J. -G. Cheng

We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film…

材料科学 · 物理学 2009-02-06 Anna S. Molinari , Helena Alves , Zhihua Chen , Antonio Facchetti , Alberto F. Morpurgo

We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors…

材料科学 · 物理学 2009-11-13 Z. Q. Li , V. Podzorov , N. Sai , M. C. Martin , M. E. Gershenson , M. Di Ventra , D. N. Basov

In highest quality organic single-crystal field-effect transistors, electron transport occurs in the band-like regime, with the carrier mobility increasing upon lowering temperature. Neither the microscopic nature of this regime, nor why it…

材料科学 · 物理学 2016-03-01 Yulia Krupskaya , Marco Gibertini , Nicola Marzari , Alberto F. Morpurgo

We report on fabrication and characterization of field effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with room temperature effective mobility up to 0.30 cm2/Vs and on/off ratios up to 5*10^6. A…

凝聚态物理 · 物理学 2014-10-13 V. Y. Butko , X. Chi , D. V. Lang , A. P. Ramirez

Intrinsic electron- and hole-phonon interactions are investigated in monolayer transition metal dichalcogenides MX$_2$ (M=Mo,W; X=S,Se) based on a density functional theory formalism. Due to their structural similarities, all four materials…

介观与纳米尺度物理 · 物理学 2015-06-22 Zhenghe Jin , Xiaodong Li , Jeffrey Thomas Mullen , Ki Wook Kim

We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated…

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