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The advent of new-class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as hopping between localized states versus extended state conduction. Here, we…

Recent experiments in silicon MOSFETs indicate that the Hall coefficient is independent of magnetic field applied at a small angle with respect to the plane. Below a scattering between spin-up and spin-down carriers is considered to be the…

介观与纳米尺度物理 · 物理学 2009-11-07 Sergey A. Vitkalov

Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…

介观与纳米尺度物理 · 物理学 2007-10-09 E. H. Hwang , S. Adam , S. Das Sarma

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to…

介观与纳米尺度物理 · 物理学 2016-12-23 A. Yu. Kuntsevich , A. A. Gabdullin , V. A. Prudkogliad , Yu. G. Selivanov , E. G. Chizhevskii , V. M. Pudalov

We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…

材料科学 · 物理学 2009-11-11 E. H. Hwang , S. Das Sarma

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the…

介观与纳米尺度物理 · 物理学 2014-10-29 Michael Knap , Jay D. Sau , Bertrand I. Halperin , Eugene Demler

Two-dimensional (2D) semiconductors have demonstrated great potential for next-generation electronics and optoelectronics. However, the current 2D semiconductors suffer from intrinsically low carrier mobility at room temperature, which…

材料科学 · 物理学 2023-03-08 Chenmu Zhang , Ruoyu Wang , Himani Mishra , Yuanyue Liu

We present an investigation of the 2D attractive Hubbard model, considered as an effective model relevant to superconductivity in strongly interacting electron systems. We use both hybrid Monte Carlo simulations and existing hopping…

强关联电子 · 物理学 2008-02-03 R. Lacaze , A. Morel , B. Petersson , J. Schroper

A theory is developed for the density and temperature dependent carrier conductivity in doped three-dimensional (3D) Dirac materials focusing on resistive scattering from screened Coulomb disorder due to random charged impurities (e.g.,…

介观与纳米尺度物理 · 物理学 2015-01-20 S. Das Sarma , E. H. Hwang , Hongki Min

A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak…

We study the role of charge density-wave fluctuations on the temperature dependence of Seebeck coefficient in quasi-one dimensional conductors with a Peierls instability. The description of low-dimensional incommensurate charge density-wave…

强关联电子 · 物理学 2020-03-25 M. Mbodji , C. Bourbonnais

Infrared (20-120 cm-1 and 900-1100 cm-1) Faraday rotation and circular dichroism are measured in high Tc superconductors using sensitive polarization modulation techniques. Optimally doped YBCO thin films are studied at temperatures down to…

超导电性 · 物理学 2009-10-31 J. Cerne , M. Grayson , D. C. Schmadel , G. S. Jenkins , H. D. Drew , R. Hughes , J. S. Preston , P. -J. Kung

Hall effect is an important phenomenon when a magnetic field is applied to materials. From the curve depicting the Hall resistance versus the magnetic field, crucial information such as carrier concentration can be extracted. If the curve…

The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs…

介观与纳米尺度物理 · 物理学 2009-07-20 Jing Qiao Zhang , Sergey Vitkalov , A. A. Bykov

In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…

介观与纳米尺度物理 · 物理学 2018-09-12 E. J. Fox , I. T. Rosen , Yanfei Yang , George R. Jones , Randolph E. Elmquist , Xufeng Kou , Lei Pan , Kang L. Wang , D. Goldhaber-Gordon

We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…

强关联电子 · 物理学 2009-10-31 A. R. Hamilton , M. Y. Simmons , M. Pepper , D. A. Ritchie

We have measured the weak localization magnetoresistance in (001)-oriented Si MOS structures with a wide range of mobilities. For the quantitative analysis of the data, we have extended the theory of weak-localization corrections in the…

无序系统与神经网络 · 物理学 2007-10-15 A. Yu. Kuntsevich , N. N. Klimov , S. A. Tarasenko , N. S. Averkiev , V. M. Pudalov , H. Kojima , M. E. Gershenson

Pulsed field measurements of the Hall resistivity and magnetoresistance of underdoped YBa2Cu4O8 are analyzed self-consistently using a simple model based on coexisting electron and hole carriers. The resultant mobilities and Hall numbers…

Selfconsistent equations which describe the order parameter and chemical potential behaviour in $2D$ metalic system as functions of external magnetic field, $H$, temperature, $T$, and carrier density, $n$, are obtained. It is shown that for…

凝聚态物理 · 物理学 2019-08-15 V. P. Gusynin , V. M. Loktev , I. A. Shovkovy

Using the semiclassical Boltzmann transport theory, we analytically consider dc charge transport in gapless electron-hole (both chiral and non-chiral) systems in the presence of resistive scattering due to static disorder arising from…

无序系统与神经网络 · 物理学 2015-05-11 S. Das Sarma , E. H. Hwang