中文
相关论文

相关论文: Temperature dependent weak field Hall resistance i…

200 篇论文

We study the temperature dependence of the electrical resistivity of interacting two-dimensional metallic systems. We perform a numerical simulation of the nonequilibrium state based on semiclassical Boltzmann transport theory. Through our…

强关联电子 · 物理学 2013-12-24 Jonathan M. Buhmann

Recent cold atom experiments have observed bad and strange metal behaviors in strongly-interacting Fermi-Hubbard systems. Motivated by these results, we calculate the thermoelectric transport properties of a 2D Fermi-Hubbard system in the…

量子气体 · 物理学 2021-08-27 Thomas G. Kiely , Erich J. Mueller

Screening of an external random potential by a two dimensional (2D) Fermi liquid may be strongly dependent on the degree of its polarization. This is considered as a possible mechanism for the observed strong magnetoresistance of the 2D…

强关联电子 · 物理学 2009-10-31 Igor F. Herbut

We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…

强关联电子 · 物理学 2007-05-23 Xuan P. A. Gao , G. S. Boebinger , A. P. Mills , A. P. Ramirez , L. N. Pfeiffer , K. W. West

We investigate the Hall effect in a quasi one-dimensional system made of weakly coupled Luttinger Liquids at half filling. Using a memory function approach, we compute the Hall coefficient as a function of temperature and frequency in the…

强关联电子 · 物理学 2007-12-04 G. León , C. Berthod , T. Giamarchi

We use quantum kinetic theory to calculate the thermoelectric transport properties of the 2D single band Fermi-Hubbard model in the weak coupling limit. For generic filling, we find that the high-temperature limiting behaviors of the…

量子气体 · 物理学 2021-11-03 Thomas G. Kiely , Erich J. Mueller

Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum…

The chiral Luttinger liquid model for the edge dynamics of a two-dimensional electron gas in a strong magnetic field is derived from coarse-graining and a lowest Landau level projection procedure at arbitrary filling factors $\nu<1$ --…

介观与纳米尺度物理 · 物理学 2009-11-10 Roberto D'Agosta , Roberto Raimondi , Giovanni Vignale

We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…

应用物理 · 物理学 2025-01-27 Joseph E. Dill , Chuan F. C. Chang , Debdeep Jena , Huili Grace Xing

We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…

介观与纳米尺度物理 · 物理学 2017-02-01 Valla Fatemi , Quinn D. Gibson , Kenji Watanabe , Takashi Taniguchi , Robert J. Cava , Pablo Jarillo-Herrero

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted…

In this study, we investigate the conductivity of a two-dimensional (2D) system in HgTe quantum well comprising two types of carriers with linear and quadratic spectra, respectively. The interactions between the two-dimensional Dirac holes…

介观与纳米尺度物理 · 物理学 2024-01-03 G. M. Gusev , A. D. Levin , E. B. Olshanetsky , Z. D. Kvon , V. M. Kovalev , M. V. Entin , N. N. Mikhailov

We report measurements of the resistance of silicon MOSFETs as a function of temperature in high parallel magnetic fields where the 2D system of electrons has been shown to be fully spin-polarized. A magnetic field suppresses the metallic…

强关联电子 · 物理学 2009-10-31 K. M. Mertes , Hairong Zheng , S. A. Vitkalov , M. P. Sarachik , T. M. Klapwijk

We derive a Kubo-like formula for the thermal Hall conductance of a 2d lattice systems which is free from ambiguities associated with the definition of energy magnetization. We use it to define a relative topological invariant of gapped 2d…

强关联电子 · 物理学 2020-02-05 Anton Kapustin , Lev Spodyneiko

We revisited the influence of electron-electron scattering on the resistivity of a two-dimensional system with linear spectrum. In conventional systems with parabolic spectrum, where Umklapp scattering is either prohibited or ineffective…

介观与纳米尺度物理 · 物理学 2025-05-19 V. M. Kovalev , M. V. Entin , Z. D. Kvon , A. D. Levin , V. A. Chitta , G. M. Gusev , N. N. Mikhailov

Here, we report a systematic study on the Hall-effect of the semi-metallic state of bulk MoTe$_2$, which was recently claimed to be a candidate for a novel type of Weyl semi-metallic state. The temperature ($T$) dependence of the carrier…

超导电性 · 物理学 2016-09-07 Qiong Zhou , D. Rhodes , Q. R. Zhang , S. Tang , R. Schönemann , L. Balicas

Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostructures, the Hall effect is not applicable, and the density…

We consider the Hall effect in a system of weakly coupled Luttinger chains. We obtain the full conductivity tensor in the absence of dissipation along the chains. We show that while the dependence of the Hall and transverse conductivities…

强关联电子 · 物理学 2009-10-31 Andrei Lopatin , Antoine Georges , T. Giamarchi

We present a unified Boltzmann-transport theory for the drag resistivity in two-component systems close to a second-order phase transition. We find general expressions for the drag resistivity in two and three spatial dimensions, for…

介观与纳米尺度物理 · 物理学 2013-12-25 M. P. Mink , H. T. C. Stoof , R. A. Duine , Marco Polini , G. Vignale

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong…