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It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a…

强关联电子 · 物理学 2015-05-28 Richard L. J. Qiu , Xuan P. A. Gao , Loren N. Pfeiffer , Ken W. West

We describe and discuss the low-temperature resistivity (and the temperature-dependent inelastic scattering rate) of several different doped 2D semiconductor systems from the perspective of the Planckian hypothesis asserting that…

介观与纳米尺度物理 · 物理学 2022-11-02 Seongjin Ahn , Sankar Das Sarma

The detailed derivation of a theory for transport in quasi-two-dimensional metals, with small-angle elastic scattering and angle-independent inelastic scattering is presented. The transport equation is solved for a model Fermi surface…

强关联电子 · 物理学 2009-11-10 Elihu Abrahams , C. M. Varma

Transport properties of the good thermoelectric misfit oxide Ca$_3$Co$_4$O$_9$ are examined. In-plane resistivity and Hall resistance measurements were made on epitaxial thin films which were grown on {\it c}-cut sapphire substrates using…

强关联电子 · 物理学 2009-11-11 H. W Eng , P. Limelette , W. Prellier , Ch. Simon , R. Fresard

Hall viscosity is a nondissipative response function describing momentum transport in two-dimensional (2D) systems with broken time-reversal symmetry. In the classical regime, Hall viscosity contributes to the viscous flow of 2D electrons…

介观与纳米尺度物理 · 物理学 2018-10-16 G. M. Gusev , A. D. Levin , E. V. Levinson , A. K. Bakarov

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the…

介观与纳米尺度物理 · 物理学 2009-11-07 N. S. Averkiev , L. E. Golub , S. A. Tarasenko , M. Willander

The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different…

介观与纳米尺度物理 · 物理学 2024-03-21 A. V. Snegirev , V. M. Kovalev , M. V. Entin , E. B. Olshanetsky , N. N. Mikhailov , Z. D. Kvon

Using the bottom-up approach in a holographic setting, we attempt to study both the transport and thermodynamic properties of a generic system in 3+1 dimensional bulk spacetime. We show the exact 1/T and $T^2$ dependence of the longitudinal…

高能物理 - 理论 · 物理学 2013-05-29 Shesansu Sekhar Pal

The Hall coefficient is related to the effective carrier density and Fermi surface topology in noninteracting and weakly interacting systems. In strongly correlated systems, the relation between the Hall coefficient and single-particle…

强关联电子 · 物理学 2020-07-31 Wen O. Wang , Jixun K. Ding , Brian Moritz , Edwin W. Huang , Thomas P. Devereaux

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field…

介观与纳米尺度物理 · 物理学 2009-10-26 Robert N. McFarland , Tomasz M. Kott , Luyan Sun , K. Eng , B. E. Kane

We calculate the temperature dependent conductivity of graphene in the presence of randomly distributed Coulomb impurity charges arising from the temperature dependent screening of the Coulomb disorder without any phonons. The purely…

介观与纳米尺度物理 · 物理学 2009-05-22 E. H. Hwang , S. Das Sarma

The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature…

无序系统与神经网络 · 物理学 2009-10-31 G. M. Minkov , A. V. Germanenko , O. E. Rut , O. I. Khrykin , V. I. Shashkin , V. M. Danil'tsev

In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…

材料科学 · 物理学 2023-07-05 Rohit Kumar , Anup Kumar Mandia , Anuja Singh , Bhaskaran Muralidharan

An arbitrarily small concentration of impurities can affect the spin Hall conductivity in a two-dimensional semiconductor system. We develop a Boltzmann-like equation that can be used for impurity scattering with arbitrary angular…

介观与纳米尺度物理 · 物理学 2007-05-23 A. V. Shytov , E. G. Mishchenko , H. -A. Engel , B. I. Halperin

Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and…

介观与纳米尺度物理 · 物理学 2015-01-27 Nicholas J. Goble , John D. Watson , Michael J. Manfra , Xuan P. A. Gao

We investigate the Hall effect in two different theoretical models of strongly correlated systems: a system made of weakly coupled Luttinger liquids, in the presence of umklapp scattering, and the 2D triangular lattice, with…

强关联电子 · 物理学 2008-12-11 Gladys León

Typically, Hall coefficient of materials near magnetic instabilities exhibits pronounced temperature dependence. To explore the reasons involved, we studied the temperature dependence of Hall coefficient in $Cr_{1-x}V_x$, $V_{2-y}O_3$ and…

强关联电子 · 物理学 2024-07-08 Jalaja Pandya , Navinder Singh

In this work, we present the investigation of temperature dependent hall measurement of the ultra thin VO$_2$ films grown on Si/SiO$_2$ substrate. Experimental results suggest that electrons are the predominant carrier both in the…

材料科学 · 物理学 2016-09-19 Fangfang Song , B. E. White.

The transresistance and the Hall transresistance of dirty two-dimensional bi-layer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a non-zero Hall transresistance. In a…

介观与纳米尺度物理 · 物理学 2009-10-31 Yuval Oreg , Bertrand I. Halperin

Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall…