相关论文: Temperature dependent weak field Hall resistance i…
We report a detailed analytic and numerical study of electronic thermal conductivity in d-wave superconductors. We compare theory of the cross over at low temperatures from T-dependence to T^3-dependence for increasing temperature with…
How ordered phases melt in low-dimensional quantum materials remain difficult to resolve because the relevant fluctuations are dynamic and charge neutral. In this work, we show that thermal transport provides a sensitive probe of these…
A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 66601 (2018)] is applied to nodal line and Weyl semimetals (including graphene), and to spin-orbit split semiconductor bands in two and three…
In situ transport measurements have been made on ultrathin ($<$100 {\AA} thick) polycrystalline Fe films as a function of temperature and magnetic field for a wide range of disorder strengths. For sheet resistances $R_{xx}$ less than $\sim…
The behaviors of resistance, magnetoresistance (up to 5 T), and Hall electromotive force (EMF) with varying temperature (from 10 to 300 K) and measuring current (from 10 mkA to 10 mA) are studied for the Si sample with CrSi2…
It is assumed that in a two-dimensional electron system with strong correlation (a Wigner liquid), appearance of some relatively slow-moving objects (clusters) composed of small number of electrons is possible. Such clusters may exist in…
We have studied the transport process in the two dimensional electron gas (2DEG) in presence of a magnetic field and a dissipative environment at temperature T. By means of imaginary time series functional integral method we calculate the…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we…
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here…
Hall effect in high-mobility 2D mesoscopic samples with hydrodynamic electron transport is related to manifestation of non-dissipative Hall viscosity at classical magnetic fields. However, the latter can be obscured by the particular…
We have studied quantum-well-confined holes based on the Luttinger-model description for the valence band of typical semiconductor materials. Even when only the lowest quasi-two-dimensional (quasi-2D) subband is populated, the static spin…
The layer interdependence of transport in an undoped electron-hole bilayer (uEHBL) device was studied as a function of carrier density, interlayer electric field, and temperature. The uEHBL device consisted of a density tunable,…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
We calculate the dissipative dc conductivity of a two-dimensional electron system in a magnetic field for the situation when its effective temperature exceeds the temperature of the acoustic phonon system. We demonstrate that at…
We have investigated the temperature and magnetic field dependence of the Hall coefficient of two well-characterized superconducting MgB$_2$ films (T$_{c0}$=38.0 K) in both the normal and superconducting states. Our results show that the…
We study quantum Hall effect within the framework of a newly proposed approach, which captures the principal results of some proposals. This can be established by considering a system of particles living on the non-commutative plane in the…
Based on a thermodynamic approach, we have calculated the resistivity of a 2D electron gas, assumed $dissipationless$ in a strong quantum limit. Standard measurements, with extra current leads, define the resistivity caused by a combination…
We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with…
By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…