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相关论文: Variational description of Mott insulators

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We show that effectively cold metastable states in one-dimensional photo-doped Mott insulators described by the extended Hubbard model exhibit spin, charge and $\eta$-spin separation. Namely, their wave functions in the large on-site…

强关联电子 · 物理学 2023-03-14 Yuta Murakami , Shintaro Takayoshi , Tatsuya Kaneko , Andreas M. Läuchli , Philipp Werner

Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…

强关联电子 · 物理学 2012-05-11 Zala Lenarčič , Peter Prelovšek

Recently, correlated physics such as superconductivity and insulator at commensurate fractional electron fillings has been discovered in several different systems with Moire superlattice and narrow electron bands near charge neutrality.…

强关联电子 · 物理学 2018-10-12 Chao-Ming Jian , Cenke Xu

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

Critical properties in the dynamical charge correlation function for the one-dimensional Mott insulator are studied. By properly taking into account {\it the final-state interaction} between the charge and spin degrees of freedom, we find…

凝聚态物理 · 物理学 2009-10-31 T. Fujii , N. Kawakami

We present a new method, based on the combination of analytical and numerical techniques within the framework of the dynamical mean-field theory (DMFT). Building upon numerically exact results obtained in an improved quantum Monte Carlo…

强关联电子 · 物理学 2007-05-23 N. Blümer , E. Kalinowski

The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion, and hopping t. A critical line V_c(U) approximately equal to…

强关联电子 · 物理学 2009-11-07 Eric Jeckelmann

In an attempt to clarify the nature of the crossover from a Peierls band insulator to a Mott Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein Hubbard model using exact…

强关联电子 · 物理学 2007-05-23 H. Fehske , G. Wellein , A. Weiße , F. Göhmann , H. Büttner , A. R. Bishop

We study a simple model of interacting bosons on a d-dimensional cubic lattice whose dynamics conserves both total boson number and total boson dipole moment. This model provides a simple framework in which several remarkable consequences…

量子气体 · 物理学 2022-09-14 Ethan Lake , Michael Hermele , T. Senthil

The description of interactions in strongly-correlated topological phases of matter remains a challenge. Here, we develop a stochastic functional approach for interacting topological insulators including both charge and spin channels. We…

强关联电子 · 物理学 2021-08-18 Joel Hutchinson , Philipp W. Klein , Karyn Le Hur

There are two classes of Mott insulators in nature, distinguished by their responses to weak doping. With increasing chemical potential, Type I Mott insulators undergo a first order phase transition from the undoped to the doped phase. In…

强关联电子 · 物理学 2009-11-07 Dung-Hai Lee , Steven A. Kivelson

Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed both in simulations and in experiments,…

强关联电子 · 物理学 2022-10-05 Tsung-Han Lee , J. Vučičević , D. Tanasković , E. Miranda , V. Dobrosavljević

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

We study small systems of Mott insulating ultracold atoms under the influence of gauge potentials and spin-orbit couplings. We use second order perturbation theory in tunneling, derive an effective theory for the Mott insulators with one…

量子气体 · 物理学 2012-09-28 J. -P. Martikainen

We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…

强关联电子 · 物理学 2020-08-26 Sudeshna Sen , Patrick J. Wong , Andrew K. Mitchell

Recent investigations suggest that both spin-orbit coupling and electron correlation play very crucial roles in the $5d$ transition metal oxides. By using the generalized Gutzwiller variational method and dynamical mean-field theory with…

强关联电子 · 物理学 2015-06-12 Liang Du , Li Huang , Xi Dai

We study the phase diagram of two weakly coupled one-dimensional dipolar boson chains at half-odd-integer fillings. We find that the system contains a rich phase diagram. Four different phases are found. They are the Mott insulators, the…

超导电性 · 物理学 2009-11-13 Yu-Wen Lee

The half-filled ground state of the Hubbard model in one dimension is studied by Kondo-lattice theory. Because of the Kondo effect, any insulating ground state with a complete gap open is unstable in the presence of an infinitesimal…

强关联电子 · 物理学 2011-09-29 Fusayoshi J. Ohkawa