相关论文: Variational description of Mott insulators
Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…
Variational wave functions have been a successful tool to investigate the properties of quantum spin liquids. Finding their parent Hamiltonians is of primary interest for the experimental simulation of these strongly correlated phases, and…
More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…
Spin-only descriptions of the half-filled one-band Hubbard model are relevant for a wide range of Mott insulators. In addition to the usual Heisenberg exchange, many new types of interactions, including ring exchange, appear in the…
The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…
We study a two-dimensional bosonic Hubbard model with two hard-core species away from half filling using Quantum Monte Carlo simulations. The model includes a repulsive interspecies interaction and different nearest-neighbor hopping terms…
Spin-liquid behavior was recently suggested experimentally in the moderately one-dimensional organic compound $\kappa$-H$_3$(Cat-EDT-TTF)$_2$. This compound can be modeled by the one-band Hubbard model on the anisotropic triangular lattice…
We study the interplay of strong electron correlations and intra-triangle spin exchange at two-thirds filling of the single-orbital Hubbard model on the decorated honeycomb lattice using rotationally invariant slave bosons. We find that the…
We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…
The Mott insulator provides an excellent foundation for exploring a wide range of strongly correlated physical phenomena, such as high-temperature superconductivity, quantum spin liquid, and colossal magnetoresistance. A Mott insulator with…
In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…
We investigate the local moment formation in the half-filled SU($N$) Hubbard model under a staggered ionic potential. As the Hubbard $U$ increases, the charge fluctuations are suppressed and eventually frozen when $U$ is above a critical…
When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…
We propose a correlated spin-singlet-pairs wave function to describe the spin-gap phase of the one-dimensional $t-J$ model at low density. Adding a Jastrow factor with a variational parameter, $\nu$, first introduced by Hellberg and Mele,…
Based on dynamical cluster approximation (DCA) quantum Monte Carlo simulations, we study the interaction-driven Mott metal-insulator transition (MIT) in the half-filled Hubbard model on the anisotropic two-dimensional triangular lattice,…
We study the extended Bose-Hubbard model on the square lattice at half filling as a function of next-nearest neighbor hopping amplitude and interaction strength. To variationally map out the phase diagram of this model, we develop a…
We study the Mott-insulator transition of bosonic atoms in optical lattices. Using perturbation theory, we analyze the deviations from the mean-field Gutzwiller ansatz, which become appreciable for intermediate values of the ratio between…
Recently, a quantum anomalous Hall state at odd integer filling in moir\'e stacked MoTe$_2$/WSe$_2$ was convincingly interpreted as a topological Mott insulator state appearing due to strong interactions in {\it band} basis [P. Mai, J.…
To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding…
Quantum phase transitions in Mott insulators do not fit easily into the Landau-Ginzburg-Wilson paradigm. A recently proposed alternative to it is the so called deconfined quantum criticality scenario, providing a new paradigm for quantum…