相关论文: Single-electron transistors in electromagnetic env…

We have studied the environmental effect on superconducting single-electron transistors (S-SETs) by biasing S-SETs with arrays of small-capacitance dc SQUIDs, whose effective impedance can be varied in situ. As the zero-bias resistance of…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…

We have measured the Cooper Pair Transistor (CPT) in a tunable electromagnetic environment consisting of four one-dimensional SQUID arrays. The transport properties of the CPT in the high impedance limit, Z_env>>R_Q=6.45~k\Omega, are…

In a recent Letter by the authors [I.S. Burmistrov and A.M.M. Pruisken, Phys. Rev. Lett. 101, 056801 (2008)] it was shown that single-electron devices (single electron transistor or SET) display "macroscopic charge quantization" which is…

We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at…

We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the…

We study the behavior of a single electron transistor (SET) represented by a dissipative tunnel junction between a pair of quantum dots described by two (possibly, different) Sachdev-Ye-Kitaev (SYK) models. A combined influence of the soft…

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

We have measured the current-voltage (I-V) characteristics of small-capacitance single Josephson junctions at low temperatures (T=0.02-0.6 K), where the strength of the coupling between the single junction and the electromagnetic…

We calculate the full frequency spectral density of voltage fluctuations in a Single Electron Transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunnel…

We report sharp peaks in the differential conductance of a single-electron transistor (SET) at low temperature, for gate voltages at which charge fluctuations are suppressed. For odd numbers of electrons we observe the expected Kondo peak…

The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage…

The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…

We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…

We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combination of a deep mesa etch and AlOx backfill is used to…

We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of…