相关论文: Single-electron charging and detection in a latera…

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…

A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of…

Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…

Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is…

We use photoluminescence spectroscopy to investigate the ground state of single self-assembled InGaAs lateral quantum dot molecules. We apply a voltage along the growth direction that allows us to control the total charge occupancy of the…

InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and…

Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…

We present a self-consistent Schroedinger-Poisson scheme for simulation of electrostatic quantum dots defined in gated two-dimensional electron gas formed at n-AlGaAs/GaAs heterojunction. The computational method is applied to a…

Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined…

We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the…

We study the electronic and optical properties of laterally coupled InGaAs/GaAs quantum dot molecules under lateral electric field. We find that electrons perceive the double-dot structure as a compound single object, while the holes…

We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality…

Quasi-static transport measurements are employed to characterize a few electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide…

We analyzed the localized charge dynamics in the system of $N$ interacting single-level quantum dots (QDs) coupled to the continuous spectrum states in the presence of Coulomb interaction between electrons within the dots. Different dots…

Colloidal Quantum Dots (CQDs), major building blocks in modern opto-electronic devices, have so far been synthesized with only one emission center where the exciton resides. Recent development of coupled Colloidal Quantum Dots Molecules…

Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…

The many-particle ground state and excitations of self-assembled InAs quantum dots are investigated using far-infrared (FIR) and capacitance spectroscopy. The contributions of quantization and charging energies to the $n$--electron energy…

We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper…

Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of…

We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…