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相关论文: Fermi liquid behavior of metallic 2D holes at high…

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We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…

强关联电子 · 物理学 2007-05-23 Xuan P. A. Gao , G. S. Boebinger , A. P. Mills , A. P. Ramirez , L. N. Pfeiffer , K. W. West

It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a…

强关联电子 · 物理学 2015-05-28 Richard L. J. Qiu , Xuan P. A. Gao , Loren N. Pfeiffer , Ken W. West

Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum…

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, at r_s as large as 29, negative magnetoresistance does exist…

介观与纳米尺度物理 · 物理学 2009-11-07 Y. Y. Proskuryakov , A. K. Savchenko , S. S. Safonov , M. Pepper , M. Y. Simmons , D. A. Ritchie

We report on a zero magnetic field transport study of a two-dimensional, variable-density, hole system in GaAs. As the density is varied we observe, for the first time in GaAs-based materials, a crossover from an insulating behavior at…

介观与纳米尺度物理 · 物理学 2016-08-31 Y. Hanein , U. Meirav , D. Shahar , C. C. Li , D. C. Tsui , Hadas Shtrikman

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field…

强关联电子 · 物理学 2009-11-07 Xuan P. A. Gao , Allen P. Mills , Arthur P. Ramirez , Loren N. Pfeiffer , Kenneth W. West

We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…

强关联电子 · 物理学 2009-10-31 A. R. Hamilton , M. Y. Simmons , M. Pepper , D. A. Ritchie

On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, $k_BT\tau /\hbar $ $>1$. It is shown that the 'metallic' behaviour of…

介观与纳米尺度物理 · 物理学 2009-11-07 Y. Y. Proskuryakov , A. K. Savchenko , S. S. Safonov , M. Pepper , M. Y. Simmons , D. A. Ritchie

The zero-field temperature-dependence of the resistivity of two-dimensional holes are observed to exhibit two qualitatively different characteristics for a fixed carrier density for which only the metallic behavior of the so-called…

强关联电子 · 物理学 2007-12-20 Jian Huang , J. S. Xia , D. C. Tsui , L. N. Pfeiffer , K. W. West

We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…

凝聚态物理 · 物理学 2007-05-23 S. V. Kravchenko , Whitney Mason , J. E. Furneaux , J. M. Caulfield , J. Singleton , V. M. Pudalov

The $T^2$-scaling of resistivity with temperature is often viewed as a classic hallmark of a Fermi-liquid (FL) behavior in metals. However, if umklapp scattering is suppressed, this scaling is not universally guaranteed to occur. In this…

强关联电子 · 物理学 2025-07-16 Tatia Kiliptari , Dmitrii L. Maslov

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…

无序系统与神经网络 · 物理学 2007-05-23 G. Deville , R. Leturcq , D. L'Hote , R. Tourbot , C. J. Mellor , M. Henini

We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…

介观与纳米尺度物理 · 物理学 2015-08-04 Binhui Hu , M. M. Yazdanpanah , B. E. Kane , E. H. Hwang , S. Das Sarma

Linear temperature dependence of transport coefficients in metals is often ascribed to non-Fermi-liquid physics. Here we demonstrate the $T$-linear behavior of nonlocal conductivity in a clean 2D electron fluid, where carrier collisions…

介观与纳米尺度物理 · 物理学 2025-02-11 Serhii Kryhin , Qiantan Hong , Leonid Levitov

Non-Fermi liquid behavior is shown to occur in two-dimensional metals which are close to a charge ordering transition driven by the Coulomb repulsion. A linear temperature dependence of the scattering rate together with an increase of the…

强关联电子 · 物理学 2009-11-11 J. Merino , A. Greco , N. Drichko , M. Dressel

We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Misra , N. C. Bishop , E. Tutuc , M. Shayegan

A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high…

介观与纳米尺度物理 · 物理学 2009-10-31 M. Y. Simmons , A. R. Hamilton , M. Pepper , E. H. Linfield , P. D. Rose , D. A. Ritchie , .

A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged…

介观与纳米尺度物理 · 物理学 2020-07-16 Meng K. Ma , K. A. Villegas Rosales , H. Deng , Y. J. Chung , L. N. Pfeiffer , K. W. West , K. W. Baldwin , R. Winkler , M. Shayegan

The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the…

强关联电子 · 物理学 2021-03-09 Xiaxin Ding , Jie Xing , Gang Li , Luis Balicas , Krzysztof Gofryk , Hai-Hu Wen

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$…

介观与纳米尺度物理 · 物理学 2009-11-13 M. J. Manfra , E. H. Hwang , S. Das Sarma , L. N. Pfeiffer , K. W. West , A. M. Sergent
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