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相关论文: Limit of Field Effect Mobility on Pentacene Single…

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We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The…

材料科学 · 物理学 2009-11-10 R. W. I. de Boer , T. M. Klapwijk , A. F. Morpurgo

We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…

强关联电子 · 物理学 2009-11-10 V. Podzorov , S. E. Sysoev , E. Loginova , V. M. Pudalov , M. E. Gershenson

Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…

强关联电子 · 物理学 2007-05-23 Jin Gyu Park , Relja Vasic , James S. Brooks , John E. Anthony

We explore the effect of molecular size on injected carrier transport. We have fabricated and characterized field effect transistors (FETs) on optically transparent single crystals of tetracene, the molecule of which is comprised of four…

凝聚态物理 · 物理学 2007-05-23 V. Y. Butko , X. Chi , A. P. Ramirez

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

材料科学 · 物理学 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

We have obtained a hole mobility for the organic conductor pentacene of 35 cm2/Vs at room temperature increasing to 58 cm2/Vs at 225K. These high mobilities result from a purification process in which 6,13-pentacenequinone was removed by…

软凝聚态物质 · 物理学 2009-11-10 Oana D. Jurchescu , Jacob Baas , Thomas T. M. Palstra

We present measurements of the transient photoconductivity in pentacene single crystals using optical-pump THz-probe spectroscopy. We have measured the temperature and fluence dependence of the mobility of the photoexcited charge carriers…

凝聚态物理 · 物理学 2016-01-26 V. K. Thorsmolle , R. D. Averitt , X. Chi , D. J. Hilton , D. L. Smith , A. P. Ramirez , A. J. Taylor

We report on single crystal high mobility organic field-effect transistors (OFETs) prepared on prefabricated substrates using a "flip-crystal" approach. This method minimizes crystal handling and avoids direct processing of the crystal that…

其他凝聚态物理 · 物理学 2009-11-10 C. Goldmann , S. Haas , C. Krellner , K. P. Pernstich , D. J. Gundlach , B. Batlogg

A method has been developed to inject mobile charges at the surface of organic molecular crystals, and the DC transport of field-induced holes has been measured at the surface of pentacene single crystals. To minimize damage to the soft and…

凝聚态物理 · 物理学 2009-11-10 J. Takeya , C. Goldmann , S. Haas , K. P. Pernstich , B. Ketterer , B. Batlogg

We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film…

材料科学 · 物理学 2009-02-06 Anna S. Molinari , Helena Alves , Zhihua Chen , Antonio Facchetti , Alberto F. Morpurgo

Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent…

The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In…

介观与纳米尺度物理 · 物理学 2016-11-17 Zhihong Chen , Joerg Appenzeller

We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs…

强关联电子 · 物理学 2009-11-07 V. Podzorov , V. M. Pudalov , M. E. Gershenson

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved…

材料科学 · 物理学 2009-11-10 A. F. Stassen , R. W. I. de Boer , N. N. Iosad , A. F. Morpurgo

We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…

强关联电子 · 物理学 2023-11-21 A. S. Furman

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…

We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated…

Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge…

材料科学 · 物理学 2009-11-10 Roswitha Zeis , Theo Siegrist , Christian Kloc

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In…

其他凝聚态物理 · 物理学 2009-11-11 R. W. I. de Boer , A. F. Stassen , M. F. Craciun , C. L. Mulder , A. Molinari , S. Rogge , A. F. Morpurgo

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…

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