相关论文: Compressibility of a two-dimensional hole gas in t…
We report measurements of spin susceptibility of a two-dimensional hole gas confined at an GaAs/AlGaAs interface in density range from 2.8 x 10^10 to 6.5 x 10^10 cm-2. We used the method of spin polarization of carriers in parallel magnetic…
By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the…
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well…
We report measurements and calculations of the spin-subband depopulation, induced by a parallel magnetic field, of dilute GaAs two-dimensional (2D) hole systems. The results reveal that the shape of the confining potential dramatically…
Two-dimensional hole gases (2DHGs) have strong intrinsic spin-orbit coupling and could be used to build spin filters by utilising transverse magnetic focusing (TMF). However, with an increase in the spin degree of freedom, holes demonstrate…
The suppression by a magnetic field of the anomalous H=0 conducting phase in high-mobility silicon MOSFETs is independent of the angle between the field and the plane of the 2D electron system. In the presence of a parallel field large…
We study the transport properties of the two-dimensional electron gas in AlGaAs/GaAs heterostructures in parallel to the interface magnetic fields at low temperatures. The magnetoresistance in the metallic phase is found to be positive and…
The conductivity of a two-dimensional electron gas in a parallel magnetic field is calculated. We take into account the magnetic field induced spin-splitting, which changes the density of states, the Fermi momentum and the screening…
The charge and spin Hall conductance of the two-dimensional hole gas within the Luttinger model with and without inversion symmetry breaking terms in a perpendicular magnetic field are studied, and two key phenomena are predicted. The sign…
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ and $\rho_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The…
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field…
Magnetoresistivity $\rho _{xx}$ and $\rho _{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic…
Experimental data available in the literature on the diagonal resistivity of GaAs/AlGaAs heterostructures in a magnetic field at the filling factor 1/2 have been compared with the existing theoretical prediction [B. I. Halperin et al.,…
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p \sim 7 \times 10^{10}$ cm$^{-2}$, $r_{s} \sim 6$) two-dimensional (2D) hole systems…
Hall effect of two-dimensional holes that are spin-polarized by a strong parallel magnetic field was explored with a small tilt angle. The Hall resistivity increases nonlinearly with the magnetic field and exhibits negative corrections. The…
We investigate quantum Hall stripes under in-plane magnetic field $B_\parallel$ in a variable-density two-dimensional electron gas. At filling factor $\nu = 9/2$, we observe one, two, and zero $B_\parallel$-induced reorientations at low,…
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to $H>H_{sat}$, the field…
We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction…
Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…