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相关论文: Superconducting Mg-B films by pulsed laser deposit…

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Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The…

Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to…

Thin superconducting films of magnesium diboride (MgB2) with Tc \approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ…

High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature…

Superconducting MgB2 thin films were fabricated on Al2O3(0001) substrates under an ex-situ processing conditions. Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of…

超导电性 · 物理学 2019-08-17 S. F. Wang , S. Y. Dai , Y. L. Zhou , Z. H. Chen , D. F. Cui , J. D. Yu , M. He , H. B. Lu , G. Z. Yang

We have grown MgB2 films in a postannealing process. Precursors were prepared on Al2O3(0001) substrates by codeposition of Mg and MgB2 using pulsed laser deposition technique. Superconducting MgB2 thin films were obtained via an ex situ…

超导电性 · 物理学 2007-05-23 Yi Zhao , Yuemeng Chi , Ruijuan Nie , Furen Wang

Growth of MgB2 thin films by pulsed laser deposition is examined under ex situ and in situ processing conditions. For the ex situ process, Boron films grown by PLD were annealed at 900 C with excess Mg. For the in situ process, different…

Superconducting MgB2 thin films were prepared on 50-micrometer-thick, flexible polyamide Kapton-E foils by vacuum co-deposition of Mg and B precursors with nominal thickness of about 100 nm and a special ex-situ rapid annealing process in…

超导电性 · 物理学 2009-11-07 P. Kus , A. Plecenik , L. Satrapinsky , Y. Xu , R. Sobolewski

The in situ annealing conditions of pulsed laser deposited MgB2 films were studied. The precursor films were deposited at 250 C from a stoichiometric MgB2 target in a 120mTorr Ar atmosphere. The films were then in situ annealed at a…

超导电性 · 物理学 2009-11-10 Yue Zhao , Mihail Ionescu , Alexey V. Pan , Shi Xue Dou , E. W. Collings

We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of…

A series of MgB2 thin films were fabricated by pulsed laser deposition (PLD), doped with various amounts of Si up to a level of 18wt%. Si was introduced into the PLD MgB2 films by sequential ablation of a stoichiometric MgB2 target and a Si…

超导电性 · 物理学 2007-05-23 Y. Zhao , M. Ionescu , J. Horvat , A. H. Li , S. X. Dou

Superconducting MgB(2) films with Tc = 38.6 K were prepared using a precursor-deposition, ex-situ post-processing approach. Precursor films of boron, ~0.5 micrometer thick, were deposited onto Al(2)O(3) (102) substrates by e-beam…

We introduce a simple method of an MgB2 film preparation using sequential electron-beam evaporation of B-Mg two-layer (followed by in-situ annealing) on the NbN buffered Si(100) substrate. The Transmission Electron Microscopy analyses…

We have investigated the thermodynamic and kinetic barriers involved in the synthesis of MgB2 films. This work refines our initial conjectures predicting optimal MgB2 thin film growth conditions as a consequence of the unusually large…

超导电性 · 物理学 2018-07-04 Jihoon Kim , Rakesh K. Singh , Nathan Newman , John M. Rowell

We report the growth of high-quality c-axis-oriented epitaxial MgB2 thin films by using a pulsed laser deposition technique. The thin films grown on (1`1 0 2) Al2O3 substrates show a Tc of 39 K. The critical current density in zero field is…

超导电性 · 物理学 2009-11-07 W. N. Kang , Hyeong-Jin Kim , Eun-Mi Choi , C. U. Jung , Sung-Ik Lee

Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions…

超导电性 · 物理学 2009-11-07 A. Plecenik , L. Satrapinsky , P. Kus , S. Gazi , S. Benacka , I. Vavra , I. Kostic

Superconducting MgB2 thin films were prepared on Al2O3(0001) and MgO(100) substrates. Boron thin films were deposited by the electron-beam evaporation followed by post-annealing process with magnesium. Proper post annealing conditions were…

超导电性 · 物理学 2009-11-07 S. H. Moon , J. H. Yun , H. N. Lee , J. I. Kye , H. G. Kim , W. Chung , B. Oh

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C.…

超导电性 · 物理学 2009-11-11 S. Chromik , J. Huran , V. Strbik , M. Spankova , I. Vavra , W. Bohne , J. Rohrich , E. Strub , P. Kovac , S. Stancek

Highly smooth and c-axis oriented superconducting MgB2 thin films were prepared by pulsed laser deposition (PLD) with off-axis geometry. The films were deposited on Al2O3-C substrates perpendicularly aligned to a stoichiometric MgB2 target…

超导电性 · 物理学 2009-11-11 Yue Zhao , Mihail Ionescu , Josip Horvat , Shi Xue Dou

The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO…

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