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相关论文: Metal-insulator transition in the Hubbard model: a…

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The strong coupling diagram technique is used for investigating states near the metal-insulator transition in the half-filled two-dimensional repulsive Hubbard model. The nonlocal third-order term is included in the irreducible part along…

强关联电子 · 物理学 2018-10-30 A. Sherman

The Kondo divergences owing to interaction of current carriers with local moments in highly correlated electron systems are considered within the Hubbard and s-d exchange models with infinitely strong on-site interaction, the many-electron…

强关联电子 · 物理学 2015-06-25 V. Yu. Irkhin , A. V. Zarubin

In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…

强关联电子 · 物理学 2015-06-25 Leonid Didukh , Vasyl Hankevych

We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…

凝聚态物理 · 物理学 2007-05-23 Goetz Moeller , Qimiao Si , Gabriel Kotliar , Marcelo Rozenberg

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…

强关联电子 · 物理学 2009-11-07 Shigeki Onoda , Masatoshi Imada

Using the determinant quantum Monte Carlo method, we investigate the metal-insulator transition in the interacting disordered Hubbard model of a Lieb lattice, in which the system characterizes the flat band centered at the Fermi level. By…

强关联电子 · 物理学 2022-12-06 Yueqi Li , Lingyu Tian , Tianxing Ma , Hai-Qing Lin

We study the electronic structure and correlations in the geometrically frustrated two dimensional checkerboard lattice. In the large U limit considered here we start from an extended Hubbard model of spinless fermions at half-filling. We…

强关联电子 · 物理学 2007-05-23 Y. Z. Zhang , Tran Minh-Tien , V. Yushankhai , P. Thalmeier

The electron correlations in narrow energy bands are examined in framework of the Hubbard model. The single-particle Green function and energy spectrum are obtained in paramagnetic state at half-filling by means of new two-pole…

强关联电子 · 物理学 2011-12-30 Leonid Didukh , Yuriy Skorenkyy

We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…

强关联电子 · 物理学 2017-09-13 W. Zhu , D. N. Sheng , Jian-Xin Zhu

In the framework of the many-electron s-d exchange model and Hubbard model, self-consistent equations are derived for the one-particle retarded Green's function in the many-electron Hubbard X-operator representation. We analyze the general…

强关联电子 · 物理学 2015-06-03 A. O. Anokhin , A. V. Zarubin , V. Yu. Irkhin

We study a three-dimensional Anderson-Hubbard model under the coexistence of short-range interaction and diagonal disorder within the Hartree-Fock approximation. We show that the density of states at the Fermi energy is suppressed in the…

强关联电子 · 物理学 2010-09-13 Hiroshi Shinaoka , Masatoshi Imada

The three-band Hubbard model is a fundamental model for understanding properties of the Copper-Oxygen planes in cuprate superconductors. We use cutting-edge auxiliary-field quantum Monte Carlo (AFQMC) methods to investigate ground state…

超导电性 · 物理学 2019-04-17 Ettore Vitali , Hao Shi , Adam Chiciak , Shiwei Zhang

The model of a strongly correlated system in which periodically spaced Anderson-Hubbard centers are introduced into narrow-band metal is considered. Besides the interactions between localized magnetic moments and strong on-site Coulomb…

强关联电子 · 物理学 2023-07-19 Yuriy Skorenkyy , Leonid Didukh , Oleksandr Kramar , Yuriy Dovhopyaty

The effects of mass imbalance in a three-component Hubbard model are studied by the dynamical mean-field theory combined with exact diagonalization. The model describes a fermion-fermion mixture of two different particle species with a mass…

强关联电子 · 物理学 2015-04-01 Duong-Bo Nguyen , Duy-Khuong Phung , Van-Nham Phan , Minh-Tien Tran

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

The Mott-Hubbard transition in the half-filled Hubbard model is studied analytically for the paramagnetic ground state and the classical N\'{e}el state. The single-particle density of states is obtained by calculating the Green's function…

凝聚态物理 · 物理学 2013-07-19 Jongbae Hong , Hae-Young Kee

We use state-of-the-art numerical techniques to compute ground state correlations in the two-dimensional SU(3) Fermi Hubbard model at $1/3$-filling, modeling fermions with three possible spin flavors moving on a square lattice with an…

The single-particle dynamics close to a metal-to-insulator transition induced by strong repulsive interaction between the electrons is investigated. The system is described by a half-filled Hubbard model which is treated by dynamic…

强关联电子 · 物理学 2015-03-13 Michał Karski , Carsten Raas , Götz S. Uhrig

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh
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