相关论文: Depletion-mode N-polar AlN-based high electron mob…
We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V…
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For higher power demands, the ultra-wide bandgap semiconductor…
We investigate the influence of AlN buffer thickness on the structural, electrical, and thermal properties of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates by metal-organic chemical vapor…
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under the gate and a 31 nm Al0.35Ga0.65N barrier in the gate access…
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 microns. Breakdown voltage reached >3 kV (tool limit) before…
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 \Omega / \Box ) is reported. Optimization of growth conditions, such as…
High Electron Mobility Transistors (HEMTs) are most suitable for harsh environments as they operate reliably under extreme conditions such as high voltages, high temperatures, radiation exposure and corrosive atmospheres. In this article,…
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility…
A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag. Two high-density two-dimensional electron gas (2DEG)…
The emerging wide bandgap BAlN alloys have potentials for improved III-nitride power devices including high electron mobility transistor (HEMT). Yet few relevant studies have been carried. In this work, we have investigated the use of the…
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG)…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe…
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…
Thermal transport in high-electron-mobility-transistor (HEMT) structures grown on 4H-SiC substrates by metalorganic-vapour-phase epitaxy (MOCVD) is systematically investigated. The thermal conductivity of the GaN channel and AlN buffer…
III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.…
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power converters. The on resistance of the fabricated transistors was ~20…
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology.…
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon…
In this letter, we report on the theoretical investigations of electron mobility in practically viable designs of InxGa1-xN channel high electron mobility transistors (HEMT). Carriers in such devices are expected to exhibit a higher…