用于晶体管应用的N极性AlN缓冲层MOVPE生长
应用物理
2018-11-12 v1
摘要
我们展示了通过金属有机气相外延生长的N极性AlN层的电学表征，以及N极性AlN沟道金属-半导体场效应晶体管（MESFETs）的演示。在高温生长N极性AlN过程中非故意掺入了高浓度硅，导致高缓冲层漏电流。随着生长温度降低，硅浓度从2x10^18 /cm^3降至9x10^15 /cm^3，使缓冲层漏电流在100 V偏压下降至5.6 nA/mm。由于高电阻率AlN缓冲层，该N极性AlN MESFET表现出0.27 nA/mm的关态漏电流和4.6x10^4的晶体管开关比。
引用
@article{arxiv.1811.03953,
title = {N-polar AlN buffer growth by MOVPE for transistor applications},
author = {J. Lemettinen and H. Okumura and T. Palacios and S. Suihkonen},
journal= {arXiv preprint arXiv:1811.03953},
year = {2018}
}
备注
This is the version of the article before peer review or editing, as submitted by an author to Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.11.101002