相关论文: Non-volatile superconducting tunnelling magnetores…
Ferroelectric-based capacitive crossbar arrays have been proposed for energy-efficient in-memory computing in the charge domain. They combat the challenges like sneak paths and high static power faced by resistive crossbar arrays but are…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside…
We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the…
We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350mK and in magnetic fields up to 9T, with thin film deposition and in-situ cleaving capabilities. The main…
When biased at a voltage just below a superconductor's energy gap, a tunnel junction between this superconductor and a normal metal cools the latter. While the study of such devices has long been focussed to structures of submicron size and…
Contacts between high critical field superconductors and semiconductor nanowires are important in the context of topological quantum circuits in which superconductivity must be sustained to high magnetic fields. Here we demonstrate…
We propose a new type of multi-bit and energy-efficient magnetic memory based on current-driven, field-free, and highly controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the…
We investigate the phenomenon of decay of a supercurrent in a superconducting thin film in the absence of an applied magnetic field. The resulting zero-temperature resistance derives from two equally possible mechanisms: 1) quantum…
We present a new study of magnetic structures with controllable effective exchange energy for Josephson switches and memory. As a basis for a weak link we propose to use a periodic structure comprised of ferromagnetic (F) layers spaced by…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs). Recent progress in modulating spin-orbit interactions at…
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
Josephson junctions containing two ferromagnetic layers are being considered for use in cryogenic memory. Our group recently demonstrated that the ground-state phase difference across such a junction with carefully chosen layer thicknesses…