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Exchange bias (EB) is a cornerstone of modern magnetic memory and sensing technologies. Its extension to the realm of two-dimensional (2D) van der Waals (vdW) magnets holds promise for revolutionary advancements in miniaturized and…

介观与纳米尺度物理 · 物理学 2024-06-05 Jifeng Shao , Xiaolong Yin , Chunhao Bao , Sirong Lu , Xiaoming Ma , Shu Guo , Le Wang , Xi Zhang , Zhiyue Li , Longxiang Li , Yue Zhao , Tingyong Chen

This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhibit a negative differential resistance (NDR) effect due to a…

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary…

Superconducting circuits are a strong contender for realizing quantum computing systems, and are also successfully used to study quantum optics and hybrid quantum systems. However, their cryogenic operation temperatures and the current lack…

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…

介观与纳米尺度物理 · 物理学 2014-12-16 Niladri Chatterji , Ashwin A Tulapurkar , Bhaskaran Muralidharan

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential…

Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…

Time-division multiplexing of cryogenic signals is a promising approach to reduce space requirements, shorten cooldown times, and increase the number of quantum devices measured per cooldown. We demonstrate time-division multiplexing of…

The superconducting gap structure of a topological crystalline insulator (TCI) candidate ZrRuAs ($T^{\rm on}_{\rm c}$ = 7.9(1) K) with a noncentrosymmetric crystal structure has been investigated using muon spin rotation/relaxation…

Quantum memories are an integral component of quantum repeaters - devices that will allow the extension of quantum key distribution to communication ranges beyond that permissible by passive transmission. A quantum memory for this…

Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices with potential for memory and emerging computing schemes such…

Flash memory based on floating gate transistor is the most widely used memory technology in modern microelectronic applications. We recently proposed a new concept of multilayer graphene nanoribbon (MLGNR) and carbon nanotube (CNT) based…

介观与纳米尺度物理 · 物理学 2016-11-15 Nahid M. Hossain , Md Belayat Hossain , Masud H. Chowdhury

Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…

介观与纳米尺度物理 · 物理学 2015-08-12 Nahid M. Hossain , Masud H. Chowdhury

We analyze the quantum information processing capability of a superconducting transmon circuit used to mediate interactions between quantum information stored in a collection of phononic crystal cavity resonators. Having only a single…

量子物理 · 物理学 2019-07-31 Marek Pechal , Patricio Arrangoiz-Arriola , Amir H. Safavi-Naeini

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information…

介观与纳米尺度物理 · 物理学 2021-12-28 Hai-Bin Xue , Jiu-Qing Liang , Wu-Ming Liu

Superconducting quantum computers have emerged as a leading platform for next-generation computing, offering exceptional scalability and unprecedented computational speeds. However, scaling these systems to millions of qubits for practical…

量子物理 · 物理学 2025-07-21 Yong-Bok Lee , Connor Devitt , Xu Zhu , Nicholas Yost , Yabei Gu , Sunil A. Bhave

Microwave-to-optical quantum transducers will enable coherent interconnection between distant superconducting quantum devices. Ongoing explorations with several platforms have shown promising results at single-photon levels. However, in all…

量子物理 · 物理学 2026-05-05 Ujjwal Gautam , Nasser Gohari Kamel , Sourabh Kumar , Daniel Oblak

Superconducting diodes enable dissipationless directional transport, yet achieving electrical tunability and scalability remains a major challenge for circuit-level integration. Here, we demonstrate an electrothermal-switch superconducting…