We theoretically investigate the effective exchange interaction, Jeff, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of Jeff, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.
@article{arxiv.1910.11549,
title = {Voltage-Controlled Magnonic Spin Tunneling Junction},
author = {Kohei Ohgane and Yuta Yahagi and Daisuke Miura and Akimasa Sakuma},
journal= {arXiv preprint arXiv:1910.11549},
year = {2019}
}