Related papers: Voltage-Controlled Magnonic Spin Tunneling Junctio…
Exerting control of the magnetic exchange interaction in heterostructures is of both basic interest and has potential for use in spin-based applications relying on quantum effects. We here show that the sign of the exchange interaction in a…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection. However, its experimental verification has been challenging…
The energy of exchange coupled antiferromagnetic insulators (AFMIs) is a periodic function of the relative in-plane orientation of the N\'{e}el vector fields. We show that this leads to oscillations in the relative magnetization of exchange…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
Electronic spin current is convertible to magnonic spin current via the creation or annihilation of thermal magnons at the interface of a magnetic insulator and a metal with a strong spin-orbital coupling. So far this phenomenon was…
We investigate the interplay between the thermodynamic properties and spin-dependent transport in a mesoscopic device based on a magnetic multilayer (F/f/F), in which two strongly ferromagnetic layers (F) are exchange-coupled through a…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
The search for novel spintronic devices brings about new ways to control switching in magnetic thin-films. In this work we experimentally demonstrate a device based on thermoelectrically controlled exchange coupling. The read out signal…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
We propose an electric-field-controlled mechanism for magnetization switching assisted solely by the interlayer-exchange coupling (IEC) between the fixed and the free magnets, which are separated by two oxide barriers sandwiching a spacer…
Nonlinear devices, such as transistors, enable contemporary computing technologies. We theoretically investigate nonlinear effects, bearing a high fundamental scientific and technical relevance, in magnonics with emphasis on…
We show that in the presence of ferromagnetic electronic reservoirs and spin-dependent tunnel couplings, molecular vibrations in nonmagnetic single molecular transistors induce an effective intramolecular exchange magnetic field. It…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Ferromagnetic resonance properties of F$_1$/f/F$_2$/AF multilayers, where weakly ferromagnetic spacer f is sandwiched between strongly ferromagnetic layers F$_1$ and F$_2$, with F$_1$ being magnetically soft and F$_2$ - magnetically hard…
We use a ferromagnetic voltage probe model to study the influence of inelastic scattering on giant magnetoresistance and current-induced torques in ferromagnetic and antiferromagnetic metal spin valves. The model is based on the Green's…
Ferromagnetic spin-valves and tunneling junctions are crucial for spintronics applications and are one of the most fundamental spintronics devices. Motivated by the potential unique advantages of antiferromagnets for spintronics, we…