相关论文: Engineering altermagnetic symmetry to enable anoma…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3(111) substrates. We report that the Dirac surface states are insensitive to Cr…
In this work, we propose an intrinsic mechanism to understand the even-odd effect, namely the opposite signs of the anomalous Hall resistance and the different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the…
Magnetic semiconductors are attracting high interest because of their potential use for spintronics, a new technology which merges electronics and manipulation of conduction electron spins. (GaMn)As and (GaMn)N have recently emerged as the…
Altermagnets constitute an emerging class of collinear magnets that exhibit zero net magnetization yet host spin-split electronic bands arising from non-relativistic spin-space-group symmetries. Realization of altermagnetism in the…
We explored the possibility of realizing quantum anomalous Hall effect by placing heavy-element atomic layer on top of monolayer CrI$_{3}$ with a natural cleavage surface and broken time-reversal symmetry. We showed that CrI$_{3}$/X (X =…
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…
Recently discovered, altermagnetism represents a third class of collinear magnets. These materials exhibit zero net magnetization, similar to antiferromagnets, but display anomalous transport properties resembling those of ferromagnets.…
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After…
Altermagnets are a newly discovered class of magnetic phases that combine the spin polarization behavior of ferromagnetic band structures with the vanishing net magnetization characteristic of antiferromagnets. Initially proposed for…
We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a…
The discovery of altermagnet (AM) marks a significant advancement in magnetic materials, combining characteristics of both ferromagnetism and antiferromagnetism. In this Letter, we focus on CrSb, which has been verified to be an AM and to…
The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and…
We report on the first example of epitaxial Mn$_{3 + \delta}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~\mu_B$/Mn,…