稀磁拓扑绝缘体外延薄膜中反常霍尔效应的场效应调制
介观与纳米尺度物理
2016-02-03 v1
摘要
通过分子束外延在热处理过的绝缘SrTiO3(111)衬底上生长了高质量的铬(Cr)掺杂三维拓扑绝缘体(TI) Sb2Te3薄膜。我们报道狄拉克表面态对Cr掺杂不敏感，并在外延Sb2-xCrxTe3薄膜中揭示了完美的鲁棒长程铁磁序。反常霍尔效应通过施加背栅进行调制，与传统稀磁半导体(DMSs)中的铁磁性相反，此处矫顽场不随载流子密度降低而显著变化。与载流子无关的铁磁性预示Sb2-xCrxTe3薄膜是实现量子反常霍尔(QAH)效应的基础候选TI材料。这些结果也表明了在未来基于TI的磁电子学与自旋电子学中控制反常霍尔电压的潜力。
引用
@article{arxiv.1509.06608,
title = {Field-effect Modulation of Anomalous Hall Effect in Diluted Ferromagnetic Topological Insulator Epitaxial Films},
author = {Cui-Zu Chang and Min-Hao Liu and Zuo-Cheng Zhang and Yayu Wang and Ke He and Qi-Kun Xue},
journal= {arXiv preprint arXiv:1509.06608},
year = {2016}
}
备注
13 pages, 4 figures, invited research article for Science China (Physics, Mechanics & Astronomy). This paper gives the story behind QAH effect. Comments are welcomed