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Materials that change their magnetic properties in response to the external stimuli have long been of interest for their potential applicability in magnetic storage device, spintronics and smart magnetic materials. Organic materials are…

材料科学 · 物理学 2018-02-09 Yan Cui , Huiping Zhu , Lei Wang , Bo Li , Zhengsheng Han , Jiajun Luo

Learning with physical systems is an emerging paradigm that seeks to harness the intrinsic nonlinear dynamics of physical substrates for learning. The impetus for a paradigm shift in how hardware is used for computational intelligence stems…

无序系统与神经网络 · 物理学 2026-04-28 Francesco Caravelli , Gianluca Milano , Adam Z. Stieg , Carlo Ricciardi , Simon Anthony Brown , Zdenka Kuncic

Soft stretchable materials are key for arising technologies such as stretchable electronics or batteries, smart textiles, biomedical devices, tissue engineering and soft robotics. Recent attempts to design such materials, via e.g.…

The control and manipulation of filamentary resistive switching (FRS) is essential for practical applications in fields like non-volatile memories and neuromorphic computing. However, key aspects of the dynamics of conductive filament…

介观与纳米尺度物理 · 物理学 2024-10-31 R. Leal Martir , E. A. Jagla , D. Rubi , M. J. Sánchez

Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates…

In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is demonstrated. Comprehensive experimental investigations reveal…

Abstract: Bionic learning with fused sensing, memory and processing functions outperforms artificial neural networks running on silicon chips in terms of efficiency and footprint. However, digital hardware implementation of bionic learning…

新兴技术 · 计算机科学 2022-02-22 Shijie Wang , Xi Chen , Chao Zhao , Yuxin Kong , Baojun Lin , Yongyi Wu , Zhaozhao Bi , Ziyi Xuan , Tao Li , Yuxiang Li , Wei Zhang , En Ma , Zhongrui Wang , Wei Ma

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large…

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state…

Future development of the modern nanoelectronics and its flagships internet of things and artificial intelligence as well as many related applications is largely associated with memristive elements. This technology offers a broad spectrum…

Interfacing artificial functional materials and living neuronal tissues is at the forefront of bio-nano-technology. Attempts have been so far based onto microscale processing of metals and inorganic semiconductors as electrodes or…

Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…

材料科学 · 物理学 2013-06-10 Gaurav Gandhi , Varun Aggarwal

Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such resistive switching is unique to nanoscale devices, but its underlying physical mechanism remains…

Prussian blue analogues (PBAs) and related organic materials are promising platforms for next-generation memory and energy-storage technologies due to their redox activity, ionic mobility, and compatibility with low-cost and scalable…

材料科学 · 物理学 2025-12-08 L. B. Avila

Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…

材料科学 · 物理学 2009-05-21 J. Yao , L. Zhong , D. Natelson , J. M. Tour

The scaling limitations of conventional transistors demand alternative device concepts capable of dynamic reconfigurability at the atomic scale. Resistive switching (RS), a key mechanism for neuromorphic computing and non-volatile memory,…

Memristive devices made of silicon compatible simple oxides are of great interest for storage and logic devices in future adaptable electronics and non-digital computing applications. A series of highly desirable properties observed in an…

材料科学 · 物理学 2024-01-18 Cynthia P. Quinteros , Jordi Antoja-Lleonart , Beatriz Noheda

Memristive materials are related to neuromorphic applications as they can combine information processing with memory storage in a single computational element, just as biological neurons. Many of these bioinspired materials emulate the…

The translation of emerging application concepts that exploit Resistive Random Access Memory (ReRAM) into large-scale practical systems requires realistic, yet computationally efficient, empirical models that can capture all observed…

新兴技术 · 计算机科学 2017-03-06 Ioannis Messaris , Alexander Serb , Ali Khiat , Spyridon Nikolaidis , Themistoklis Prodromakis

The need to reduce the environmental impact of inorganic electronic systems is pressing. Although the field of organic electronics provides a potential solution to this issue, research and optimization is still majorly carried out on glass…

应用物理 · 物理学 2024-07-09 Rakesh Rajendran Nair , Laura Teuerle , Jakob Wolansky , Hans Kleemann , Karl Leo