Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu; Ruijing Ge; Yuqian Gu; Emmanuel Okogbue; Jianping Shi; Abhay Shivayogimath; Peter Bøggild; Timothy J. Booth; Yanfeng Zhang; Yeonwoong Jung; Jack C. Lee; Deji Akinwande

doi:10.1109/EDTM50988.2021.9420947

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Mesoscale and Nanoscale Physics 2021-10-11 v1 Materials Science

Authors: Xiaohan Wu , Ruijing Ge , Yuqian Gu , Emmanuel Okogbue , Jianping Shi , Abhay Shivayogimath , Peter Bøggild , Timothy J. Booth , Yanfeng Zhang , Yeonwoong Jung , Jack C. Lee , Deji Akinwande

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Abstract

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

Keywords

neuromorphic computing

Cite

@article{arxiv.2110.03863,
  title  = {Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect},
  author = {Xiaohan Wu and Ruijing Ge and Yuqian Gu and Emmanuel Okogbue and Jianping Shi and Abhay Shivayogimath and Peter Bøggild and Timothy J. Booth and Yanfeng Zhang and Yeonwoong Jung and Jack C. Lee and Deji Akinwande},
  journal= {arXiv preprint arXiv:2110.03863},
  year   = {2021}
}

Comments

3 pages, 5 figures, IEEE conference(2021 5th EDTM)

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Abstract

Keywords

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