We investigate hysteresis effects in a model for non-volatile memory devices. Two mechanisms are found to produce hysteresis effects qualitatively similar to those often experimentally observed in heterostructures of transition metal oxides. One of them is a novel switching effect based on a metal-insulator transition due to strong electron correlations at the dielectric/metal interface. The observed resistance switching phenomenon could be the experimental realisation of a novel type of strongly correlated electron device.
@article{arxiv.cond-mat/0406646,
title = {Strong electron correlation effects in non-volatile electronic memory devices},
author = {Marcelo J. Rozenberg and Isao H. Inoue and Maria Jose Sanchez},
journal= {arXiv preprint arXiv:cond-mat/0406646},
year = {2007}
}