We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.
@article{arxiv.1001.0703,
title = {Mechanism for bipolar resistive switching in transition metal oxides},
author = {M. J. Rozenberg and M. J. Sanchez and R. Weht and C. Acha and F. Gomez-Marlasca and P. Levy},
journal= {arXiv preprint arXiv:1001.0703},
year = {2015}
}
Comments
Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures