We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10 nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I-V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.
@article{arxiv.cond-mat/0402687,
title = {Field-Induced Resistive Switching in Metal-Oxide Interfaces},
author = {S. Tsui and A. Baikalov and J. Cmaidalka and Y. Y. Sun and Y. Q. Wang and Y. Y. Xue and C. W. Chu and L. Chen and A. J. Jacobson},
journal= {arXiv preprint arXiv:cond-mat/0402687},
year = {2009}
}