Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Hu Young Jeong; Jeong Yong Lee; Sung-Yool Choi; Jeong Won Kim

doi:10.1063/1.3251784

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Materials Science 2015-05-13 v2 Mesoscale and Nanoscale Physics

Authors: Hu Young Jeong , Jeong Yong Lee , Sung-Yool Choi , Jeong Won Kim

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Abstract

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

Keywords

bipolar resistive switching titanium oxide thin films oxygen ions oxidation-reduction reaction TEM XPS

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@article{arxiv.0904.3628,
  title  = {Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films},
  author = {Hu Young Jeong and Jeong Yong Lee and Sung-Yool Choi and Jeong Won Kim},
  journal= {arXiv preprint arXiv:0904.3628},
  year   = {2015}
}

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10 pages, 4 figures

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

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