Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion.
@article{arxiv.1010.5656,
title = {Molecular dynamics simulations of oxide memory resistors (memristors)},
author = {S. E. Savel'ev and A. S. Alexandrov and A. M. Bratkovsky and R. Stanley Williams},
journal= {arXiv preprint arXiv:1010.5656},
year = {2015}
}