We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.
@article{arxiv.1012.5514,
title = {Molecular dynamics simulations of oxide memristors: thermal effects},
author = {S. E. Savel'ev and A. S. Alexandrov and A. M. Bratkovsky and R. Stanley Williams},
journal= {arXiv preprint arXiv:1012.5514},
year = {2015}
}