This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A physics-inspired compact model is used to effectively capture the underlying mechanisms governing resistive switching in NbOx and BiFeO3 based on memristive devices. The model includes different capacitive components in metal-insulator-metal structures to simulate capacitive effects. Drift and diffusion of particles are modeled and correlated with particles' inertia within the system. Using the model, we obtain the I-V characteristics of both devices that show good agreement with experimental findings and the corresponding C-V characteristics. This model also replicates observed non-zero crossing hysteresis in perovskite-based devices. Additionally, the study examines how the reactance of the device changes in response to variations in the device area and length.
@article{arxiv.2401.16057,
title = {Coexistence of resistive capacitive and virtual inductive effects in memristive devices},
author = {Sahitya Yarragolla and Torben Hemke and Jan Trieschmann and Thomas Mussenbrock},
journal= {arXiv preprint arXiv:2401.16057},
year = {2024}
}