相关论文: Bio-Organic Materials Based Resistive Switching Me…
Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can…
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive…
The resistive switching phenomena of HfO2 films grown by metalorganic chemical vapor deposition was studied for the application of ReRAM devices. In the fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switching characteristics…
Several abilities of biological systems, such as adaptation to natural environment, or of animals to learn patterns when appropriately trained, are features that are extremely useful, if emulated by electronic circuits, in applications…
Memristors can mimic the functions of biological synapse, where it can simultaneously store the synaptic weight and modulate the transmitted signal. Here, we report Nb/Nb2O5/Pt based memristors with bipolar resistive switching, exhibiting…
Many biological systems can form strong adhesion to various materials with complex shapes. The adhesion is further switchable between strongly adhering and completely non-adhering in a simple and fast manner. By contrast, no engineering…
The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for…
Usually, resistive switching (RS) devices show digital RS memory (sharp SET and RESET process), which is most suitable for digital data storage applications. Some RS devices also manifest ideal memristive behavior or analog memory…
Memristive devices, whose resistance can be controlled by applying a voltage and further retained, are attractive as possible circuit elements for neuromorphic computing. This new type of devices poses a number of both technological and…
Neuromorphic computing circuits can be realized using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS$_2$…
We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. These emerging materials have recently…
Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of…
Achieving the full understanding and control of the insulator-to-metal transition in Mott materials is key for the next generation of electronics devices, with applications ranging from ultrafast transistors, volatile and non-volatile…
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
Current large scale implementations of deep learning and data mining require thousands of processors, massive amounts of off-chip memory, and consume gigajoules of energy. Emerging memory technologies such as nanoscale two-terminal…