Metal halide perovskite-based materials have emerged over the past few decades as remarkable solution-processable opto-electronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, we review recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality.
@article{arxiv.2303.02220,
title = {Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices},
author = {Gaurav Vats and Brett Hodges and Andrew J. Ferguson and Lance Wheeler and Jeffrey L. Blackburn},
journal= {arXiv preprint arXiv:2303.02220},
year = {2023}
}